CrSi2 layer synthesized by high current Cr ion implantation for Schottky diode applications
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2018
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BRAZILIAN MRS MEETING, 17th
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Among the transition-metal silicides, CrSi2 has received considerable attention as
a material for silicon-based technologies because of its high-temperature stability,
oxide-forming ability and semiconducting properties [1]. Its use in infrared
photodetectors and Schottky barrier contacts has been of interest. Previous
studies indicate that bulk CrSi2 has a hexagonal structure and p-type
semiconductor character with a band gap of ≈ 0.35 eV [2].
In this work, we have synthesized and investigated the electrical-structural
correlation of CrSi2 buried layer produced by high current Cr ion implantation.
For this, Cr+ ions at an energy of 180 keV were implanted at high temperature
(550 °C) at a fluence of 4x1017 ion/cm2. An n-type (001) surface-oriented
Czochralski Si wafer (thickness 500 mm, resistivity 10-20 Ωcm) was used as host
matrix. The chromium beam current density during implantation was about 6
μA/cm2. The Schottky diode formation consisted of the junction of metal and
semiconductor, in this case, Au contact, and the CrSi2/Si, respectively.
The formation of the crystallographic phase was identified by grazing incidence Xray
diffraction. The buried layer morphology of silicide into substrate subsurface
was revealed through scanning electron microscopy. Electrical conduction was
characterized by resistivity measurements as a function of temperature (50 - 300
K), where two types of regimes are observed, i.e., two gaps: one of low
temperature and one of high temperature (270 K). The electronic mobility was
also obtained as a function of temperature by means Hall effect measurements.
The transport of electrons above the potential barrier to the metal (Schottky
barrier height), was determined by current-voltage curves (IxV) at room
temperature.
Como referenciar
VALLI, RICARDO; OLIVEIRA, FELIPE S.; OTUBO, LARISSA; LANG, ROSSANO. CrSi2 layer synthesized by high current Cr ion implantation for Schottky diode applications. In: BRAZILIAN MRS MEETING, 17th, September 16-20, 2018, Natal, RN. Abstract... São Carlos: Aptor Software, 2018. p. 1135-1136. Disponível em: http://repositorio.ipen.br/handle/123456789/30332. Acesso em: 25 Apr 2024.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.