Incorporation of Cd-doping in SnO2
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2020
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Crystals
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Tuning the electrical properties of materials by controlling their doping content has been
utilized for decades in semiconducting oxides. Here, an atomistic view is successfully employed to
obtain local information on the charge distribution and point defects in Cd-doped SnO2. We present a
study that uses the time-di erential perturbed gamma–gamma angular correlations (TDPAC) method
in samples prepared by using a sol–gel approach. The hyperfine field parameters are presented as
functions of the annealing temperature in pellet samples to show the evolution of incorporating Cd
dopants into the crystal lattice. Additionally, the system was characterized with X-ray fluorescence,
electron dispersive spectroscopy, and scanning electron microscopy after the probe nuclei 111In(111Cd)
decayed. The TDPAC results reveal that the probe ions were incorporated into two di erent local
environments of the SnO2 lattice at temperatures up to 973 K for cation substitutional sites.
Como referenciar
SCHELL, J.; DANG, T.T.; CARBONARI, A.W. Incorporation of Cd-doping in SnO2. Crystals, v. 10, n. 1, p. 1-7, 2020. DOI: 10.3390/cryst10010035. Disponível em: http://repositorio.ipen.br/handle/123456789/31090. Acesso em: 19 Apr 2024.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.