Growth of long ZnO nanowires with high density on the ZnO surface for gas sensors
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2020
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ACS Applied Nano Materials
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Among the various approaches to grow
semiconducting oxide nanowires, the thermal oxidation
procedure is considered a simple, efficient, and fast method
that allows the synthesis of micro and nanostructured
arrangements with controlled size and morphology. In the
work reported in this paper, long ZnO nanowires were
synthesized on the surface of oxidized high-purity Zn foils by
heating in air at different rates and temperatures. The size and
morphology investigated by scanning electron microscopy
(SEM) and high-resolution transmission electron microscopy
(HRTEM) for a sample heated at 620 °C with heating rate of
20 °C/min reveal the growth of long ZnO nanowires with
length of ∼50 μm and average diameter of 74 nm grown along
the ⟨112̅0⟩ direction with high population density. Results with different heating rates indicates that this parameter is
determinant in tuning the size, morphology, and population density of nanowires. X-ray diffraction (XRD) shows patterns for
both ZnO and metallic Zn with preferential orientation, whereas perturbed angular correlation (PAC) measurements using
111In(111Cd) probe nuclei indicate that probe nuclei occupy only Zn sites in the preferential oriented metallic zinc. However, for
samples submitted to high-temperature heating (820 and 1000 °C), XRD yields only the ZnO pattern and, amazingly, PAC
continues showing probe nuclei only at metallic Zn sites indicating the presence of thin regions of highly oriented Zn trapped
between grains of ZnO. Moreover, this strong preference of indium atoms (of parent radioactive 111In) here revealed helps to
understand the oxidation mechanism and the growth of the nanowires.
Como referenciar
CAMPOS, ALEX C.; PAES, SUANE C.; CORREA, BRUNO S.; CABRERA-PASCA, GABRIEL A.; COSTA, MESSIAS S.; COSTA, CLEIDILANE S.; OTUBO, LARISSA; CARBONARI, A.W. Growth of long ZnO nanowires with high density on the ZnO surface for gas sensors. ACS Applied Nano Materials, v. 3, n. 1, p. 175-185, 2020. DOI: 10.1021/acsanm.9b01888. Disponível em: http://repositorio.ipen.br/handle/123456789/31103. Acesso em: 24 Apr 2024.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.