Accumulated dose stability parameters in p-type and n-type silicon diodes

PASCOALINO, K.GONCALVES, J.A.C.CAMARGO, F.TUOMINEN, E.BUENO, C.C.2024-11-072024-11-07PASCOALINO, K.; GONCALVES, J.A.C.; CAMARGO, F.; TUOMINEN, E.; BUENO, C.C. Accumulated dose stability parameters in p-type and n-type silicon diodes. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE, May 6-10, 2024, Rio de Janeiro, RJ. <b>Proceedings...</b> Rio de Janeiro, RJ: Associação Brasileira de Energia Nuclear, 2024. p. 1-4. Disponível em: https://repositorio.ipen.br/handle/123456789/48316.https://repositorio.ipen.br/handle/123456789/483161-4openAccessAccumulated dose stability parameters in p-type and n-type silicon diodesTexto completo de eventohttps://orcid.org/0000-0002-8940-9544https://orcid.org/0000-0001-7881-7254