SANTOS, ROBINSON A. dosCOSTA, FABIO E. daMARTINS, JOAO F.T.HAMADA, MARGARIDA M.2014-11-172014-11-182015-04-022014-11-172014-11-182015-04-02SANTOS, ROBINSON A. dos; COSTA, FABIO E. da; MARTINS, JOAO F.T.; HAMADA, MARGARIDA M. Performance of thallium bromide semiconductor detectors produced by repeated Bridgman method. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 9th; MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 16th; MEETING ON NUCLEAR INDUSTRY, 1st, September 27 - October 2, 2009, Rio de Janeiro, RJ. <b>Proceedings...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/16610.http://repositorio.ipen.br/handle/123456789/16610openAccessbridgman methodcrystal growthdefectsefficiencyelectric conductivityenergy resolutionexperimental dataimpuritiesperformancesemiconductor detectorsthallium bromidesx-ray diffractionPerformance of thallium bromide semiconductor detectors produced by repeated Bridgman methodTexto completo de evento