AGUIAR, V.A.P.MEDINA, N.H.ADDED, N.MACCHIONE, E.L.A.ALBERTON, S.G.RODRIGUES, C.L.SILVA, T.F.ZAHN, G.S.GENEZINI, F.A.MORALLES, M.BENEVENUTI, F.GUAZZELLI, M.A.2019-12-272019-12-272019AGUIAR, V.A.P.; MEDINA, N.H.; ADDED, N.; MACCHIONE, E.L.A.; ALBERTON, S.G.; RODRIGUES, C.L.; SILVA, T.F.; ZAHN, G.S.; GENEZINI, F.A.; MORALLES, M.; BENEVENUTI, F.; GUAZZELLI, M.A. Thermal neutron induced upsets in 28nm SRAM. <b>Journal of Physics: Conference Series</b>, v. 1291, n. 1, p. 1-4, 2019. DOI: <a href="https://dx.doi.org/10.1088/1742-6596/1291/1/012025">10.1088/1742-6596/1291/1/012025</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/30536.1742-6588http://repositorio.ipen.br/handle/123456789/30536In this work, we present the rst results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the con guration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit- ips. It was obtained a SEU cross-section of 9:2(21) 10􀀀16 cm2=bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.1-4openAccessthermal neutronsreactorselectronic equipmentirradiation devicesiear-1 reactorresearch reactorsboronfissionArtigo de periódico1129110.1088/1742-6596/1291/1/0120250000-0002-6318-68050000-0003-3237-8588https://orcid.org/0000-0002-2664-5531https://orcid.org/0000-0002-6318-6805https://orcid.org/0000-0003-3237-8588Sem Percentil17.00