CAMARGO, F.GONCALVES, J.A.C.KHOURY, H.J.TUOMINEN, E.HARKONEN, J.BUENO, C.C.2014-11-172014-11-182015-04-022014-11-172014-11-182015-04-02CAMARGO, F.; GONCALVES, J.A.C.; KHOURY, H.J.; TUOMINEN, E.; HARKONEN, J.; BUENO, C.C. Gamma-radiation Dosimetry with magnetic czochralski silicon diode. In: NUCLEAR SCIENCE SYMPOSIUM/MEDICAL IMAGING CONFERENCE, October 26 - November 3, 2007, Honolulu, HI. <b>Proceedings...</b> p. 696-698. DOI: <a href="https://dx.doi.org/10.1109/NSSMIC.2007.4436428">10.1109/NSSMIC.2007.4436428</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/16056.http://repositorio.ipen.br/handle/123456789/16056This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p+ /n/n+ junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.696-698openAccesscobalt 60current densityczochralski methodgamma dosimetryphotocurrentssi semiconductor detectorssilicon diodestime dependenceTexto completo de evento10.1109/NSSMIC.2007.4436428https://orcid.org/0000-0001-7881-7254https://orcid.org/0000-0002-8940-9544