GONCALVES, J.A.C.BUENO, C.C.CAMARGO, F.CORREA, A.A.S.PINTO, J.K.C.2014-11-172014-11-182015-04-012014-11-172014-11-182015-04-01GONCALVES, J.A.C.; BUENO, C.C.; CAMARGO, F.; CORREA, A.A.S.; PINTO, J.K.C. Use of a rad-hard silicon diode for photon spectrometry. In: IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, Oct. 16-22, 2004, Roma, Italy. <b>Proceedings...</b> DOI: <a href="https://dx.doi.org/10.1109/NSSMIC.2004.1462622">10.1109/NSSMIC.2004.1462622</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/17520.http://repositorio.ipen.br/handle/123456789/17520-In this paper we describe the performance of an ionimplanted diode (Al/p+ /n/n+ /Al), developed in the framework of R&D programs for the future CMS experiment at LHC, for detection and spectrometry of X-and γ-rays envisaging its use in characterization of porous microstructures by X-Ray microtomography. The effects of the reverse bias on both the electronic noise and the diode energy resolution were studied using 57Co, 133Ba and 241Am radioactive sources at room temperature. In the energy range between 30 and 360 keV, it was obtained reasonable good energy resolution (e.g., FWHM = 4.2 keV for 121.6 keV gamma ray from 57Co). In the same energy range, measurements of full-energy peak efficiencies were carried out and compared with the theoretical values. The results have demonstrated that this diode is appropriate for direct detection of low energy electromagnetic radiation.openAccesssilicon diodesx-ray detectiongamma radiationspectroscopymicrostructureTexto completo de evento10.1109/NSSMIC.2004.1462622https://orcid.org/0000-0001-7881-7254https://orcid.org/0000-0002-8940-9544