CARBONARI, A.W.2014-11-172014-11-182015-04-022014-11-172014-11-182015-04-02CARBONARI, A.W. Neutron transmutation doping of silicon: highly homogeneous resistivity semiconductor material produced in nuclear reactors. In: 4th MEETING ON NUCLEAR APPLICATIONS, ENCONTRO NACIONAL DE APLICACOES NUCLEARES, August 18-22, 1997, Pocos de Caldas, MG. p. 1196-1201. DisponÃvel em: http://repositorio.ipen.br/handle/123456789/12102.http://repositorio.ipen.br/handle/123456789/121021196-1201openAccesssemiconductor materialssiliconcrystal dopingphosphorusboroniear-1 reactorthermal neutronstransmutationNeutron transmutation doping of silicon: highly homogeneous resistivity semiconductor material produced in nuclear reactorsTexto completo de eventohttps://orcid.org/0000-0002-4499-5949