HAMADA, M.M.OLIVEIRA, I.B.ARMELIN, M.J.MESQUITA, C.H.WEHE, D.K.GRIFFIN, H.C.ROGERS, W.L.2014-11-172014-11-182015-04-012014-11-172014-11-182015-04-01HAMADA, M.M.; OLIVEIRA, I.B.; ARMELIN, M.J.; MESQUITA, C.H. Trace impurities analysis determined by neutron activation in the PbIsub(2) crystal semiconductor. In: WEHE, D.K. (ed.); GRIFFIN, H.C. (ed.); ROGERS, W.L. (ed.). In: SYMPOSIUM ON RADIATION MEASUREMENTS AND APPLICATIONS, 10th, May 21-23, 2002, Ann Arbor, MI, USA. <b>Proceedings...</b> p. 517-520. DisponÃvel em: http://repositorio.ipen.br/handle/123456789/15378.http://repositorio.ipen.br/handle/123456789/15378517-520openAccesssemiconductor materialslead iodidescrystalscrystal growthbridgman methodpurificationzone refiningimpuritiestrace amountsneutron activation analysissemiconductor detectorsradiation detectorsTrace impurities analysis determined by neutron activation in the PbIsub(2) crystal semiconductorTexto completo de evento