SILVA, RUBENS C. daMORAIS, PAULO J.D. deCARVALHO, ANDREROSSI, WAGNER deMOTTA, CLAUDIO C.2024-02-082024-02-08SILVA, RUBENS C. da; MORAIS, PAULO J.D. de; CARVALHO, ANDRE; ROSSI, WAGNER de; MOTTA, CLAUDIO C. Thermophoretic efficiency in the MCVD process: a CFD modeling. In: INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS; SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE, July 31 - August 3, 2023, Campinas, SP. <b>Proceedings...</b> Piscataway, NJ, USA: IEEE, 2023. DOI: <a href="https://dx.doi.org/10.1109/OMN/SBFOTONIOPC58971.2023.10230917">10.1109/OMN/SBFOTONIOPC58971.2023.10230917</a>. DisponÃvel em: http://repositorio.ipen.br/handle/123456789/34590.http://repositorio.ipen.br/handle/123456789/34590The thermophoretic efficiency in the modified chemical vapour deposition (MCVD) process has been numerically determined under specified conditions of temperature and velocity field in the silica deposition tube. A CFD code was used to solve a steady-state numerical model of the MCVD process. The cumulative efficiency of SiO2 and GeO2 deposition was calculated along the tube length, yielding to a maximum value of 42% and 37 % respectivelly.openAccesschemical vapor depositionthermophoresiscomputer codescalculation methodssimulationThermophoretic efficiency in the MCVD processTexto completo de evento10.1109/OMN/SBFOTONIOPC58971.2023.102309170000-0003-1371-7521https://orcid.org/0000-0003-1371-7521