PASCOALINO, KELLY C.S.CAMARGO, FABIOBARBOSA, RENATA F.GONCALVES, JOSEMARY A.C.TOBIAS, CARMEN C.B.2014-11-172014-11-182015-04-022014-11-172014-11-182015-04-02PASCOALINO, KELLY C.S.; CAMARGO, FABIO; BARBOSA, RENATA F.; GONCALVES, JOSEMARY A.C.; TOBIAS, CARMEN C.B. Radiation damage effects in standard float zone silicon diodes. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 9th; MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 16th; MEETING ON NUCLEAR INDUSTRY, 1st, September 27 - October 2, 2009, Rio de Janeiro, RJ. <b>Proceedings...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/16506.http://repositorio.ipen.br/handle/123456789/16506The aim of this work was to study the radiation damage effects on the electrical properties of standard float zone diodes (STFZ). Such effects were evaluated by measuring the current and capacitance of these devices as a function of the reverse voltage. For comparison, current and capacitance measurements were carried out with a non-irradiated STFZ device. The irradiation was performed in the Radiation Technology Center (CTR) at IPENCNEN/SP using a 60Co irradiator (Gammacell 220 – Nordion) with a dose rate of about 2.2 kGy/h. Samples were irradiated at room temperature in steps variable from 50 kGy up 140 kGy which lead to an accumulated dose of 460 kGy. The results obtained have shown that the upper dose limit for a “damageless” STFZ diode is about 50 kGy.openAccesscapacitancecobalt 60dose limitsdose rateselectric currentselectric potentialexperimental datairradiation plantsphysical radiation effectsradiation dosessilicon diodesTexto completo de eventohttps://orcid.org/0000-0001-7881-7254https://orcid.org/0000-0002-8940-9544