PEREIRA, L.N.GONCALVES, J.A.C.BIZETTO, C.POTIENS, M.P.A.VIVOLO, V.BUENO, C.C.2014-11-192014-11-192015-04-012014-11-192014-11-192015-04-01PEREIRA, L.N.; GONCALVES, J.A.C.; BIZETTO, C.; POTIENS, M.P.A.; VIVOLO, V.; BUENO, C.C. Evaluation of dosimetric parameters for diagnosis X ray beams with radiation tolerant silicon diodes. In: INTERNATIONAL CONFERENCE ON SOLID STATE DOSIMETRY, 17th, 22-27 de setembro, 2013, Recife, PE. <b>Abstract...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/20282.http://repositorio.ipen.br/handle/123456789/20282openAccessdiagnostic techniquesradiologydosimetrysilicon diodesepitaxycalibrationelectron beamsdose ratesResumo de eventos científicoshttps://orcid.org/0000-0001-7881-7254https://orcid.org/0000-0002-4049-6720https://orcid.org/0000-0002-8940-9544