CORREA, A.A.S.BUENO, C.C.GONCALVES, J.A.C.MENDES, P.F.P.R.PINTO, J.K.C.SOUZA, J.P.SANTOS, M.D.S.2014-07-312014-07-312014-07-312014-07-312004CORREA, A.A.S.; BUENO, C.C.; GONCALVES, J.A.C.; MENDES, P.F.P.R.; PINTO, J.K.C.; SOUZA, J.P.; SANTOS, M.D.S. Manufactured silicon diode used as an internal conversion electrons delector. <b>Brazilian Journal of Physics</b>, v. 34, n. 3A, p. 973-975, 2004. DisponÃvel em: http://repositorio.ipen.br/handle/123456789/7590.0103-9733http://repositorio.ipen.br/handle/123456789/7590973-975openAccesselectron detectionbeta detectionsilicon diodescoincidence spectrometryphosphorus 32barium 133energy resolutionManufactured silicon diode used as an internal conversion electrons delectorArtigo de periódico3A34https://orcid.org/0000-0002-8940-9544https://orcid.org/0000-0001-7881-7254