NARDES, A.M.ANDRADE, A.M.FONSECA, F.J.DIRANI, E.A.T.MUCCILLO, R.MUCCILLO, E.N.S.2014-07-312014-07-312014-07-312014-07-312003NARDES, A.M.; ANDRADE, A.M.; FONSECA, F.J.; DIRANI, E.A.T.; MUCCILLO, R.; MUCCILLO, E.N.S. Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films. <b>Journal of Materials Science: Materials in Electronics</b>, v. 14, n. 5/7, p. 407-411, 2003. DisponÃvel em: http://repositorio.ipen.br/handle/123456789/7494.0957-4522http://repositorio.ipen.br/handle/123456789/7494407-411openAccesssiliconthin filmschemical vapor depositionplasmatemperature range 0273-0400 ktemperature range 0400-1000 kelectric conductivitystructural chemical analysishall effectimpedancespectroscopyLow-temperature PECVD deposition of highly conductive microcrystalline silicon thin filmsArtigo de periódico5/714https://orcid.org/0000-0001-9219-388Xhttps://orcid.org/0000-0002-8598-279X