HAMADA, M.M.OLIVEIRA, I.B.ARMELIN, M.J.MESQUITA, C.H.2014-07-302014-07-302014-07-302014-07-302003HAMADA, M.M.; OLIVEIRA, I.B.; ARMELIN, M.J.; MESQUITA, C.H. Trace impurities analysis determined by neutron activation in the PbIsub(2) crystal semiconductor. <b>Nuclear Instruments and Methods in Physics Research</b>, v. 505, n. 1/2, p. 517-520, 2003. Section A. DisponÃvel em: http://repositorio.ipen.br/handle/123456789/5821.0168-9002http://repositorio.ipen.br/handle/123456789/5821517-520openAccesssemiconductor materialslead iodidescrystalscrystal growthbridgman methodpurificationzone refiningimpuritiestrace amountsneutron activation analysissemiconductor detectorsradiation detectorsTrace impurities analysis determined by neutron activation in the PbIsub(2) crystal semiconductorArtigo de periódico1/2505Section A