Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry

PASCOALINO, K.GONCALVES, J.A.C.CAMARGO, F.BUENO, C.C.2021-12-282021-12-28PASCOALINO, K.; GONCALVES, J.A.C.; CAMARGO, F.; BUENO, C.C. Measurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometry. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE, November 29 - December 2, 2021, Online. <b>Proceedings...</b> Rio de Janeiro: Associação Brasileira de Energia Nuclear, 2021. Disponível em: http://repositorio.ipen.br/handle/123456789/32500.http://repositorio.ipen.br/handle/123456789/32500openAccessalpha spectroscopydosimetryenergy losseslayersphotodiodesradiation protectionsiliconthicknessMeasurement of the insensitive surface layer thickness of a PIN photodiode based on alpha-particle spectrometryTexto completo de eventohttps://orcid.org/0000-0001-7881-7254https://orcid.org/0000-0002-8940-9544