CAMARGO, F.GONCALVES, J.A.C.TUOMINEN, E.HARKONEN, J.BUENO, C.C.2014-11-172014-11-182015-04-022014-11-172014-11-182015-04-02CAMARGO, F.; GONCALVES, J.A.C.; TUOMINEN, E.; HARKONEN, J.; BUENO, C.C. Performance of DOFZ diode as on-line gamma dosimeter in radiation processing. In: IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, October 19-25, 2008. <b>Proceedings...</b> p. 2565-2567. DOI: <a href="https://dx.doi.org/10.1109/NSSMIC.2008.4774880">10.1109/NSSMIC.2008.4774880</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/16041.http://repositorio.ipen.br/handle/123456789/16041In this work, we report on results obtained with two rad-hard Diffusion Oxygenated Float Zone (DOFZ) silicon diodes as on-line gamma dosimeter in radiation processing. One device was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 700 kGy. The samples irradiation was performed using a 60Co source at a dose rate of 2.50 kGy/h from 5 kGy up 275 kGy. It was investigated the dosimetric response of these devices, operating in short-circuit current mode, with respect to the sensitivity dependence on dose and charge-dose linearity. Without any predose, the diode exhibited a significant sensitivity decrease due to radiation induced point-defects in the crystal bulk. Conversely, the pre-irradiated device presented very stable current signals with a relative charge sensitivity of 0.9 mC/kGy.2565-2567openAccesssilicon oxidesgamma dosimetryradiationsprocessingreal time systemsTexto completo de evento10.1109/NSSMIC.2008.4774880https://orcid.org/0000-0001-7881-7254https://orcid.org/0000-0002-8940-9544