SOUZA, D.N.LIMA, J.F.VALERIO, M.E.G.FANTINI, C.PIMENTA, M.A.MOREIRA, R.L.CALDAS, L.V.E.ALVES, E.McHARGUE, C.2014-11-172014-11-182015-04-022014-11-172014-11-182015-04-02SOUZA, D.N.; LIMA, J.F.; VALERIO, M.E.G.; FANTINI, C.; PIMENTA, M.A.; MOREIRA, R.L.; CALDAS, L.V.E. Influence of thermal treatment on the Raman, infrared and TL responses of natural topaz. In: ALVES, E. (ed.); McHARGUE, C. (ed.). In: INTERNATIONAL CONFERENCE ON RADIATION EFFECTS IN INSULATORS, 11th, Sept. 3-7, 2001, Lisbon, Portugal. <b>Proceedings...</b> p. 230-235. DOI: <a href="https://dx.doi.org/10.1016/S0168-583X(02)00566-9">10.1016/S0168-583X(02)00566-9</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/16300.http://repositorio.ipen.br/handle/123456789/16300Analyses of thermoluminescence (TL) and thermally stimulated exoelectron emission have proved that the natural Brazilian topaz is a promising material for dosimetry of ionizing radiation. Topaz is an aluminum fluorosilicate with a general composition of Al2(SiO4)(F, OH)2 whose main defect is the presence of OH- groups substituting for the F- ions. Analyses of topaz samples from Santo Antonio do Jacinto, MG, Brazil, showed that their TL responses are strongly affected by the temperature of pre-irradiation thermal treatment. This behavior was correlated to the changes observed in the infrared and Raman spectra and a model could be proposed for the charge trapping and recombination process in colourless topaz.230-235openAccessmineralsheat treatmentsthermoluminescenceraman spectrainfrared spectracharge carriersrecombinationTexto completo de evento10.1016/S0168-583X(02)00566-9https://orcid.org/0000-0002-7362-2455