CORDEIRO, M.R.CARBONARI, A.W.SAXENA, R.N.2014-11-172014-11-182015-04-012014-11-172014-11-182015-04-01CORDEIRO, M.R.; CARBONARI, A.W.; SAXENA, R.N. Study of defects in silicon by means of perturbed angular gamma-gamma correlation spectroscopy. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; ENCONTRO NACIONAL DE APLICACOES NUCLEARES, 7th, ago. 28 - set. 2, 2005, Santos, SP. <b>Anais...</b> DisponÃvel em: http://repositorio.ipen.br/handle/123456789/17587.http://repositorio.ipen.br/handle/123456789/17587openAccessannealingcadmium 111crystal defectsgamma cascadesindium 111kev range 100-1000monocrystalsperturbed angular correlationsilicontemperature dependenceStudy of defects in silicon by means of perturbed angular gamma-gamma correlation spectroscopyTexto completo de eventohttps://orcid.org/0000-0002-4499-5949