PEREIRA, NELSON G.A.GONZALEZ, MARIA E.L.QUEIROZ, ALVARO A.A. deOLIVEIRA, ADHIMAR F.WANDERLEY NETO, ESTACIO T.2023-12-042023-12-042023PEREIRA, NELSON G.A.; GONZALEZ, MARIA E.L.; QUEIROZ, ALVARO A.A. de; OLIVEIRA, ADHIMAR F.; WANDERLEY NETO, ESTACIO T. Higher electrical conductivity of functionalized graphene oxide doped with silver and copper (II) ions. <b>Energies</b>, v. 16, n. 20, p. 1-16, 2023. DOI: <a href="https://dx.doi.org/10.3390/en16207019">10.3390/en16207019</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/34232.1996-1073http://repositorio.ipen.br/handle/123456789/34232This study presents a new methodology for graphene oxide (GO) synthesis through electrochemical exfoliation of graphite, followed by phthalic anhydride functionalization (PhA-GO) and doping with Cu2+ and Ag+ ions. The synthesis of GO involved the use of an electrochemical cell with H2 SO4 as the electrolyte, with a gradual increase in potential from 2.3 V to 10 V. Extensive characterization techniques confirmed the successful incorporation of oxygen-containing functional groups, verifying the oxidation of graphite. PhA-GO functionalization was confirmed by thermogravimetric analysis, Differential Scanning Calorimetry, Fourier-transform infrared spectroscopy (FTIR), UV-Vis spectroscopy, X-ray diffraction, scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDX), which confirmed the presence of Cu2+ and Ag+ ions. The Scherrer equation determined a grain size of 75.85 nm for GO. The electrical properties exhibited semiconductor and semimetal behavior, particularly in PhA-GO/Ag+ composites, making them suitable for electronic devices over a wide temperature range, presenting a promising pathway for advanced materials in electronic applications.1-16openAccessgrapheneoxideselectrochemistrycrystal dopingelectric conductivityArtigo de periódico201610.3390/en1620701937.473.00