PASCOALINO, KELLY C.S.GONCALVES, JOSEMARY A.C.TOBIAS, CARMEN C.B.VANIN, VITO R.2014-11-172014-11-182015-04-022014-11-172014-11-182015-04-02PASCOALINO, KELLY C.S.; GONCALVES, JOSEMARY A.C.; TOBIAS, CARMEN C.B. Radiation damage study on the electrical properties of Si diodes. In: VANIN, VITO R. (ed.). In: BRAZILIAN WORKSHOP ON NUCLEAR PHYSICS, 33rd, September 7-11, 2010, Campos do Jordão, SP. <b>Proceedings...</b> p. 345-348. Disponível em: http://repositorio.ipen.br/handle/123456789/17879.http://repositorio.ipen.br/handle/123456789/17879345-348openAccesscapacitancecobalt 60dose ratesdoseselectric currentselectric potentialirradiationphysical radiation effectssiliconsilicon diodesTexto completo de eventohttps://orcid.org/0000-0001-7881-7254https://orcid.org/0000-0002-8940-9544