SILVA, DIEGO S. daALAYO, MARCOS I.KASSAB, LUCIANA R.P.ASSUMPCAO, THIAGO A.A. deWETTER, NIKLAUS U.JIMENEZ-VILLAR, ERNESTODUBOWSKI, JAN J.KABASHIN, ANDREI V.LINYOU, CAOGEOHEGAN, DAVID B.2018-09-192018-09-19SILVA, DIEGO S. da; ALAYO, MARCOS I.; KASSAB, LUCIANA R.P.; ASSUMPCAO, THIAGO A.A. de; WETTER, NIKLAUS U.; JIMENEZ-VILLAR, ERNESTO. Influence of silicon nanocrystals on the performance of Yb3+/Er3+: Bi2O3-GeO2 pedestal waveguides for amplification at 1542 nm. In: DUBOWSKI, JAN J. (ed.); KABASHIN, ANDREI V. (ed.); LINYOU, CAO (ed.); GEOHEGAN, DAVID B. (ed.). In: SYNTHESIS AND PHOTONICS OF NANOSCALE MATERIALS, 15th, January 27 - February 01, 2018, San Francisco, California, USA. <b>Proceedings...</b> Bellingham, WA, USA: Society of Photo-optical Instrumentation Engineers, 2018. p. 105210M-1 - 105210M-7. (SPIE Proceedings Series, 10521). DOI: <a href="https://dx.doi.org/10.1117/12.2291326">10.1117/12.2291326</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/29161.http://repositorio.ipen.br/handle/123456789/29161This paper reports for, the first time, the influence of silicon nanocrystals on the photoluminescence and optical gain of Yb3+/Er3+ codoped Bi2O3–GeO2 waveguides for amplification at 1542 nm. Pedestal waveguides were fabricated by RF- sputtering followed by optical lithography and reactive ion etching. RF-sputtering followed by heat treatment produced silicon nanocrystals with average size of 8 nm and resulted in a photoluminescence enhancement of about 10 times for the 520 nm and 1530 nm emission bands. The resulting internal gain was 5.5 dB/cm at 1542 nm, which represents and enhancement of ~50%, demonstrating potential for applications in integrated optics.105210M-1 - 105210M-7openAccesswaveguidesphotoluminescencenanocrystalsnanostructuresnanomaterialsoptical propertiesamplificationamplifierssilicondoped materialsTexto completo de evento10.1117/12.2291326https://orcid.org/0000-0002-9379-9530