NASCIMENTO, E.HELENE, O.VANIN, V.R.MORALLES, M.2014-07-312014-07-312014-07-312014-07-312005NASCIMENTO, E.; HELENE, O.; VANIN, V.R.; MORALLES, M. Study of the doppler broadening of positron annihilation radiation in silicon. <b>Brazilian Journal of Physics</b>, v. 35, n. 3B, p. 782-784, 2005. DOI: <a href="https://dx.doi.org/10.1590/S0103-97332005000500016">10.1590/S0103-97332005000500016</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/7642.0103-9733http://repositorio.ipen.br/handle/123456789/7642We report the measurement of Doppler broadening annihilation radiation in silicon, using 22Na as a positron source, and two Ge detectors arrangement. The two-dimensional coincidence energy spectrum was fitted using a model function. The model function included at rest positron annihilation with valence band, 2p, 2s, and 1s electrons. In-flight positron annihilation was also fitted. The detectors response functions included backscattering, and a combination of Compton effects, pileup, ballistic deficit, and pulse shaping problems. The obtained results agree well with the literature.782-784openAccessdoppler broadeningannihilationradiationssiliconsodium 22positronsge semiconductor detectorscompton effectArtigo de periódico3B3510.1590/S0103-97332005000500016https://orcid.org/0000-0002-2664-5531