TATIANE DA SILVA NASCIMENTO
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Artigo IPEN-doc 29041 Local crystalline structure of doped semiconductor oxides characterized by perturbed angular correlations2022 - BURIMOVA, ANASTASIA; CARBONARI, ARTUR W.; LIMA, NICOLE P. de; MIRANDA FILHO, ARNALDO A.; SOUZA, ALEXANDRE P. dos S.; SALES, TATIANE da S.N.; FERREIRA, WANDERSON L.; PEREIRA, LUCIANO F.D.; CORREA, BRUNO S.; SAXENA, RAJENDRA N.Doping semiconductor oxides with trace amounts of non-native elements can improve their properties such as bandgap and conductivity. The lack of local techniques makes the precise characterization of these materials difficult. Among the few techniques capable of providing local characterization, those based on hyperfine interactions at probe nuclei have the advantage of being well established, probing the material homogeneously and completely, thus investigating different regions of material. Some of these techniques are also quite sensitive even at extremely low dopant concentrations. The perturbed angular correlation technique, combined with first-principles calculations, has recently been shown to be a powerful method for characterizing doped semiconductor oxides. In this paper, we present a brief review of the unique information extracted from the semiconductor investigation with such a complex approach, including semiconductor oxides doped with cadmium and other elements. A strong relationship between the local environment, including electronic structure, and the nature of the dopant and the native element of the doped oxides is also shown.Artigo IPEN-doc 28524 Magnetic and structural properties of the intermetallic Ce(1−x)LaxCrGe3 series of compounds2021 - BOSCH-SANTOS, B.; CABRERA-PASCA, G.A.; CORREA, E.L.; CORREA, B.S.; SALES, T.N.S.; MOON, K-W.; DENNIS, C.L.; HUANG, Q.; LEAO, J.B.; LYNN, J.W.; CARBONARI, A.W.The Ce(1−x)LaxCrGe3 (x = 0, 0.19, 0.43, 0.58, and 1) intermetallic compound system has been investigated by magnetization measurements and neutron scattering techniques to determine the effect of La doping on the magnetic ordering and exchange interaction between Cr ions. The structural and magnetic characterization in this series was first verified by x-ray diffraction and bulk magnetization measurements. The samples exhibit the known hexagonal perovskite structure (P63/mmc space group) and have a single magnetic phase according to magnetizationmeasurements. In this paper, the ferromagnetic ordering temperature for Cr evolves smoothly from a range of 68 K to 77 K for CeCrGe3 to a range of 91 K to 96 K for LaCrGe3 as La replaces Ce. Magnetization results indicate the formation of domain walls below the transition temperature for all Ce(1−x)LaxCrGe3 systems investigated. Neutron results indicate ordered magnetic Cr moments aligned along the c axis for the x = 1 LaCrGe3 system, as well as for x = 0.19, 0.43, and 0.58, which contrasts with the x = 0 CeCrGe3 where the moments order in the ab plane.Artigo IPEN-doc 25614 Low temperature synthesis of pure and Fe-doped HfSiO4: Determination of Si and Fe fractions by neutron activation analysis2019 - SALES, T.N.S.; BOSCH-SANTOS, B.; SAIKI, M.; BURIMOVA, A.; PEREIRA, L.F.D.; SAXENA, R.N.; CARBONARI, A.W.A new method of synthesis of hafnium silicate HfSiO4 (also known as hafnon) is reported. We observed a selfcontrolled incorporation of SiO2 from the quartz tube in which a sample of hafnium oxide nanoparticles was heated. This approach was then adapted to Fe-doped hafnon production. Sample structure, morphology and composition were characterized by X-ray diffraction, electron microscopy and neutron activation analysis. Diffraction data has shown that lattice parameters of doped HfSiO4 thus obtained are very close to those previously known for bare hafnon. The hafnon-like phase stabilized at T=900 °C which is about 500 °C lower than the corresponding transition of bare bulk hafnium silicate. The fractions of Si and Fe in the composite matrices were determined with neutron activation analysis. These results completed by X-ray diffraction data allowed to assume that (i) Fe initially substituted Hf in the HfO2 lattice; (ii) there was no migration of iron atoms from Hf to Si sites at the formation of hafnon-like phase; (iii) doped and undoped hafnium oxide has taken as much Si from the quartz as was needed for the arrangement of Fe1-xHfxSiO4 tetragonal system, 0≤x<0.2. Our results are consistent with those obtained for similar materials, such as metal (Fe,V) doped zircon, where the dopant also demonstrated catalytic effect on phase stabilization.