LUCIANO FABRICIO DIAS PEREIRA
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Artigo IPEN-doc 29041 Local crystalline structure of doped semiconductor oxides characterized by perturbed angular correlations2022 - BURIMOVA, ANASTASIA; CARBONARI, ARTUR W.; LIMA, NICOLE P. de; MIRANDA FILHO, ARNALDO A.; SOUZA, ALEXANDRE P. dos S.; SALES, TATIANE da S.N.; FERREIRA, WANDERSON L.; PEREIRA, LUCIANO F.D.; CORREA, BRUNO S.; SAXENA, RAJENDRA N.Doping semiconductor oxides with trace amounts of non-native elements can improve their properties such as bandgap and conductivity. The lack of local techniques makes the precise characterization of these materials difficult. Among the few techniques capable of providing local characterization, those based on hyperfine interactions at probe nuclei have the advantage of being well established, probing the material homogeneously and completely, thus investigating different regions of material. Some of these techniques are also quite sensitive even at extremely low dopant concentrations. The perturbed angular correlation technique, combined with first-principles calculations, has recently been shown to be a powerful method for characterizing doped semiconductor oxides. In this paper, we present a brief review of the unique information extracted from the semiconductor investigation with such a complex approach, including semiconductor oxides doped with cadmium and other elements. A strong relationship between the local environment, including electronic structure, and the nature of the dopant and the native element of the doped oxides is also shown.Artigo IPEN-doc 28168 Locally symmetric oxygen vacancy around Cd impurities in CeO22021 - FERREIRA, W.L.; PEREIRA, L.F.D.; LEITE NETO, O.F.S.; MACIEL, L.S.; GONÇALVES, V.C.; SAXENA, R.N.; CARBONARI, A.W.; COSTA, M.S.; CABRERA-PASCA, G.A.A detailed investigation of the electronic structure in the neighborhood of Cd impurities in CeO2 has been performed by ab initio calculations to elucidate the interplay between the oxygen vacancies and electric quadrupole interactions. The quadrupole frequency related to the major component of the electric-field gradient (EFG) at impurities sites from its neighboring charge density as well as its symmetry were calculated by simulating oxygen vacancies at oxygen nearest neighbor of Cd. Results show a very good agreement with experimental hyperfine interactions measurements at the 111Cd nucleus replacing Ce at CeO2. A systematic mapping of oxygen vacancies in CeO2 supercells was proposed within the framework of density-functional theory using the WIEN2K code focusing on the electronic distribution in the vicinity of Cd impurities. Results show that the calculated values of EFG crucially depend on impurity-vacancy complex position and the striking axial symmetry observed when an oxygen monovancy is at the nearest neighborhood of Cd is explained by a rearrangement of its p orbitals.Artigo IPEN-doc 25614 Low temperature synthesis of pure and Fe-doped HfSiO4: Determination of Si and Fe fractions by neutron activation analysis2019 - SALES, T.N.S.; BOSCH-SANTOS, B.; SAIKI, M.; BURIMOVA, A.; PEREIRA, L.F.D.; SAXENA, R.N.; CARBONARI, A.W.A new method of synthesis of hafnium silicate HfSiO4 (also known as hafnon) is reported. We observed a selfcontrolled incorporation of SiO2 from the quartz tube in which a sample of hafnium oxide nanoparticles was heated. This approach was then adapted to Fe-doped hafnon production. Sample structure, morphology and composition were characterized by X-ray diffraction, electron microscopy and neutron activation analysis. Diffraction data has shown that lattice parameters of doped HfSiO4 thus obtained are very close to those previously known for bare hafnon. The hafnon-like phase stabilized at T=900 °C which is about 500 °C lower than the corresponding transition of bare bulk hafnium silicate. The fractions of Si and Fe in the composite matrices were determined with neutron activation analysis. These results completed by X-ray diffraction data allowed to assume that (i) Fe initially substituted Hf in the HfO2 lattice; (ii) there was no migration of iron atoms from Hf to Si sites at the formation of hafnon-like phase; (iii) doped and undoped hafnium oxide has taken as much Si from the quartz as was needed for the arrangement of Fe1-xHfxSiO4 tetragonal system, 0≤x<0.2. Our results are consistent with those obtained for similar materials, such as metal (Fe,V) doped zircon, where the dopant also demonstrated catalytic effect on phase stabilization.