Substitutional Ta-doping in Y2O3 semiconductor by sol-gel synthesis: experimental and theoretical studies

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dc.contributor.authorRICHARD, DIEGO
dc.contributor.authorRENTERIA, MARIO
dc.contributor.authorCARBONARI, ARTUR W.
dc.coverageInternacionalpt_BR
dc.date.accessioned2017-09-27T12:43:13Z
dc.date.available2017-09-27T12:43:13Z
dc.date.issued2017pt_BR
dc.description.abstractThe Pechini sol-gel method has been employed for the synthesis of pure and (Hf-181 ->)Ta-181-doped Y2O3 nanopowders. We performed a structural characterization from the micro to the subnanoscopic scale by means of scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and time-differential perturbed gamma-gamma angular correlation (PAC) spectroscopy. The results show the formation of the cubic bixbyite structure after a thermal treatment at 1473 K. For the synthesized Ta-181-doped Y2O3, the PAC experiments demonstrate that the impurities are mainly located at both substitutional cationic sites of the bixbyite structure. The experimental investigation was complemented by performing first-principles electronic structure calculations for Ta atoms localized at the two cationic sites of the Y2O3 semiconductor structure, which allow the study of the structural and electronic modifications induced in the host system when the impurities are introduced. These calculations confirm that the measured electric-field gradients for the synthesized Ta-181-doped Y2O3 correspond to double-ionized impurities located at substitutional defect-free cationic sites of the bixbyite host structure and indicate the site occupancy preference for Hf-181(-> 181Ta) doping. The behaviour of the site preference of Ta-181 impurities with temperature is also discussed. In addition to an extensive structural and electronic characterization of pure and Ta-doped Y2O3 semiconductor, our results demonstrate that the Pechini sol-gel process is an affordable and effective way to successfully synthesize these PAC substitutional doped samples.pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipIDFAPESP: 14/14001-1pt_BR
dc.description.sponsorshipIDCNPq: 305046/2013-6pt_BR
dc.format.extent1-11pt_BR
dc.identifier.citationRICHARD, DIEGO; RENTERIA, MARIO; CARBONARI, ARTUR W. Substitutional Ta-doping in Y2O3 semiconductor by sol-gel synthesis: experimental and theoretical studies. <b>Semiconductor Science and Technology</b>, v. 32, n. 8, p. 1-11, 2017. DOI: <a href="https://dx.doi.org/10.1088/1361-6641/aa7a74">10.1088/1361-6641/aa7a74</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/27800.
dc.identifier.doi10.1088/1361-6641/aa7a74pt_BR
dc.identifier.fasciculo8pt_BR
dc.identifier.issn0268-1242pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-4499-5949
dc.identifier.percentilfi56.61en
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/27800
dc.identifier.vol32pt_BR
dc.relation.ispartofSemiconductor Science and Technologypt_BR
dc.rightsopenAccesspt_BR
dc.subjecttantalum
dc.subjectdoped materials
dc.subjectnanopowders
dc.subjectyttrium oxides
dc.subjectoxide minerals
dc.subjectimpurities
dc.subjectsemiconductor materials
dc.subjectsol-gel process
dc.subjecthyperfine structure
dc.subjectcomputerized simulation
dc.subjectperturbed angular correlation
dc.titleSubstitutional Ta-doping in Y2O3 semiconductor by sol-gel synthesis: experimental and theoretical studiespt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorARTUR WILSON CARBONARI
ipen.codigoautor1437
ipen.contributor.ipenauthorARTUR WILSON CARBONARI
ipen.date.recebimento17-09pt_BR
ipen.identifier.fi2.280pt_BR
ipen.identifier.ipendoc23102pt_BR
ipen.identifier.iwosWoSpt_BR
ipen.range.fi1.500 - 2.999
ipen.range.percentilfi50.00 - 74.99
ipen.type.genreArtigo
relation.isAuthorOfPublication8f236231-e73c-4182-a596-d83e49cd0404
relation.isAuthorOfPublication.latestForDiscovery8f236231-e73c-4182-a596-d83e49cd0404
sigepi.autor.atividadeCARBONARI, ARTUR W.:1437:310:Npt_BR
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