CrSi2 layer synthesized by high current Cr ion implantation for Schottky diode applications

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dc.contributor.authorVALLI, RICARDOpt_BR
dc.contributor.authorOLIVEIRA, FELIPE S.pt_BR
dc.contributor.authorOTUBO, LARISSApt_BR
dc.contributor.authorLANG, ROSSANOpt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoBRAZILIAN MRS MEETING, 17thpt_BR
dc.date.accessioned2019-11-26T17:31:03Z
dc.date.available2019-11-26T17:31:03Z
dc.date.eventoSeptember 16-20, 2018pt_BR
dc.description.abstractAmong the transition-metal silicides, CrSi2 has received considerable attention as a material for silicon-based technologies because of its high-temperature stability, oxide-forming ability and semiconducting properties [1]. Its use in infrared photodetectors and Schottky barrier contacts has been of interest. Previous studies indicate that bulk CrSi2 has a hexagonal structure and p-type semiconductor character with a band gap of ≈ 0.35 eV [2]. In this work, we have synthesized and investigated the electrical-structural correlation of CrSi2 buried layer produced by high current Cr ion implantation. For this, Cr+ ions at an energy of 180 keV were implanted at high temperature (550 °C) at a fluence of 4x1017 ion/cm2. An n-type (001) surface-oriented Czochralski Si wafer (thickness 500 mm, resistivity 10-20 Ωcm) was used as host matrix. The chromium beam current density during implantation was about 6 μA/cm2. The Schottky diode formation consisted of the junction of metal and semiconductor, in this case, Au contact, and the CrSi2/Si, respectively. The formation of the crystallographic phase was identified by grazing incidence Xray diffraction. The buried layer morphology of silicide into substrate subsurface was revealed through scanning electron microscopy. Electrical conduction was characterized by resistivity measurements as a function of temperature (50 - 300 K), where two types of regimes are observed, i.e., two gaps: one of low temperature and one of high temperature (270 K). The electronic mobility was also obtained as a function of temperature by means Hall effect measurements. The transport of electrons above the potential barrier to the metal (Schottky barrier height), was determined by current-voltage curves (IxV) at room temperature.pt_BR
dc.format.extent1135-1136pt_BR
dc.identifier.citationVALLI, RICARDO; OLIVEIRA, FELIPE S.; OTUBO, LARISSA; LANG, ROSSANO. CrSi2 layer synthesized by high current Cr ion implantation for Schottky diode applications. In: BRAZILIAN MRS MEETING, 17th, September 16-20, 2018, Natal, RN. <b>Abstract...</b> São Carlos: Aptor Software, 2018. p. 1135-1136. Disponível em: http://repositorio.ipen.br/handle/123456789/30332.
dc.identifier.orcidhttps://orcid.org/0000-0002-6078-229X
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/30332
dc.localSão Carlospt_BR
dc.local.eventoNatal, RNpt_BR
dc.publisherAptor Softwarept_BR
dc.rightsopenAccesspt_BR
dc.titleCrSi2 layer synthesized by high current Cr ion implantation for Schottky diode applicationspt_BR
dc.typeResumo de eventos científicospt_BR
dspace.entity.typePublication
ipen.autorLARISSA OTUBO
ipen.codigoautor9697
ipen.contributor.ipenauthorLARISSA OTUBO
ipen.date.recebimento19-11
ipen.event.datapadronizada2018pt_BR
ipen.identifier.ipendoc26121pt_BR
ipen.notas.internasAbstractpt_BR
ipen.type.genreResumo
relation.isAuthorOfPublicationd4213c42-72f0-4acc-956e-bdb70003cdee
relation.isAuthorOfPublication.latestForDiscoveryd4213c42-72f0-4acc-956e-bdb70003cdee
sigepi.autor.atividadeOTUBO, LARISSA:9697:711:Npt_BR
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