A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

dc.contributor.authorCAMARGO, F.pt_BR
dc.contributor.authorGONCALVES, J.A.C.pt_BR
dc.contributor.authorBUENO, C.C.pt_BR
dc.coverageNacionalpt_BR
dc.date.accessioned2019-07-22T17:33:15Z
dc.date.available2019-07-22T17:33:15Z
dc.date.issued2019pt_BR
dc.description.abstractIn this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a 60Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with 60Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the diodes’ dosimetric responses evidenced that the best result was achieved with the DOFZ, which exhibited slightly higher sensitivity and stability than the STFZ devices. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications.pt_BR
dc.format.extent1-13pt_BR
dc.identifier.citationCAMARGO, F.; GONCALVES, J.A.C.; BUENO, C.C. A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing. <b>Brazilian Journal of Radiation Sciences</b>, v. 7, n. 2A, p. 1-13, 2019. DOI: <a href="https://dx.doi.org/10.15392/bjrs.v7i2A.681">10.15392/bjrs.v7i2A.681</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/29924.
dc.identifier.doi10.15392/bjrs.v7i2A.681pt_BR
dc.identifier.fasciculo2Apt_BR
dc.identifier.issn2319-0612pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.percentilfiSem Percentilpt_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/29924
dc.identifier.vol7pt_BR
dc.relation.ispartofBrazilian Journal of Radiation Sciencespt_BR
dc.rightsopenAccesspt_BR
dc.subjectgamma dosimetry
dc.subjectgamma radiation
dc.subjectabsorbed radiation doses
dc.subjectcomparative evaluations
dc.subjectzone melting
dc.subjectcobalt 60
dc.subjectsilicon diodes
dc.subjectradiation dose units
dc.subjectirradiation
dc.subjectdose rates
dc.subjectoxygen
dc.subjectradiation dose ranges
dc.titleA comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processingpt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.codigoautor1592
ipen.codigoautor924
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.date.recebimento19-07
ipen.identifier.fiSem F.I.
ipen.identifier.ipendoc25705pt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublicationfa74399b-83a0-4f46-91e0-da469104d3f6
relation.isAuthorOfPublication76fdc4d1-7624-4332-a9d0-f06826000679
relation.isAuthorOfPublication.latestForDiscovery76fdc4d1-7624-4332-a9d0-f06826000679
sigepi.autor.atividadeBUENO, C.C.:1592:240:Npt_BR
sigepi.autor.atividadeGONCALVES, J.A.C.:924:240:Npt_BR
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