Effect of the ohmic drop in a RPC-like chamber for measurements of electron transport parameters

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dc.contributor.authorPETRI, A.R.pt_BR
dc.contributor.authorMANGIAROTTI, A.pt_BR
dc.contributor.authorGONCALVES, J.A.C.pt_BR
dc.contributor.authorBUENO, C.C.pt_BR
dc.coverageNacionalpt_BR
dc.date.accessioned2019-08-09T13:37:15Z
dc.date.available2019-08-09T13:37:15Z
dc.date.issued2019pt_BR
dc.description.abstractThe main advantage of Resistive Plate Chambers (RPCs), applied, for instance, in High-Energy Experiments and Positron Emission Tomography (PET), is that it is spark-protected due to the presence of, at least, one high-resistive electrode. However, the ohmic drop across the latter can affect the charge multiplication significantly. In this work, we investigate this effect in a RPC-like chamber. The counter was filled with nitrogen at atmospheric pressure and the primary ionization was produced by the incidence of nitrogen pulsed laser beam on an aluminum cathode. The illumination area of the cathode was measured using a foil of millimetric paper overlaid on this electrode. In this way, the resistance of the glass anode could be estimated using the known resistivity of the glass (ρ=2×1012 Ω.cm). Therefore, the voltage drop across the dielectric was calculated by the product of the current across the gas gap and the anode resistance. In order to mitigate the effect of the resistive electrode, the laser beam intensity was limited by interposing metallic meshes between the laser and the chamber window. The dependence of the ohmic drop from the applied voltage was analyzed. The results obtained shown that, without the meshes, the ohmic drop corresponds up to 7% of the applied voltage, preventing the detection system to reach values of density-normalized electric fields in the gas gap (Eeff/N) higher than 166 Td. By minimizing the laser beam intensity and, consequently, the primary ionization, the ohmic drop represented only 0.2% of the applied voltage, extending the Eeff /N range up to 175 Td.pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipIDFAPESP: 02/04697-1pt_BR
dc.description.sponsorshipIDCNPq: 478859/2009-0; 479079/2010-2pt_BR
dc.format.extent1-11pt_BR
dc.identifier.citationPETRI, A.R.; MANGIAROTTI, A.; GONCALVES, J.A.C.; BUENO, C.C. Effect of the ohmic drop in a RPC-like chamber for measurements of electron transport parameters. <b>Brazilian Journal of Radiation Sciences</b>, v. 7, n. 2A, p. 1-11, 2019. DOI: <a href="https://dx.doi.org/10.15392/bjrs.v7i2A.637">10.15392/bjrs.v7i2A.637</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/30064.
dc.identifier.doi10.15392/bjrs.v7i2A.637pt_BR
dc.identifier.fasciculo2Apt_BR
dc.identifier.issn2319-0612pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.percentilfiSem Percentilpt_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/30064
dc.identifier.vol7pt_BR
dc.relation.ispartofBrazilian Journal of Radiation Sciencespt_BR
dc.rightsopenAccesspt_BR
dc.sourceThe Meeting on Nuclear Applications (ENAN), 13th, 22-27 de outubro, 2017, Belo Horizonte, MGpt_BR
dc.subjectvoltage drop
dc.subjectcharged-particle transport
dc.subjectelectrons
dc.subjectdielectric materials
dc.subjectelectric potential
dc.subjectelectric conductivity
dc.subjectmesh generation
dc.subjectelectrodes
dc.subjectlaser radiation
dc.titleEffect of the ohmic drop in a RPC-like chamber for measurements of electron transport parameterspt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.autorANNA RAQUEL PETRI
ipen.codigoautor1592
ipen.codigoautor924
ipen.codigoautor9310
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.contributor.ipenauthorANNA RAQUEL PETRI
ipen.date.recebimento19-08
ipen.identifier.fiSem F.I.pt_BR
ipen.identifier.ipendoc25858pt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublicationfa74399b-83a0-4f46-91e0-da469104d3f6
relation.isAuthorOfPublication76fdc4d1-7624-4332-a9d0-f06826000679
relation.isAuthorOfPublicatione54a3422-e1d3-49eb-8618-c5957943d3e4
relation.isAuthorOfPublication.latestForDiscoverye54a3422-e1d3-49eb-8618-c5957943d3e4
sigepi.autor.atividadeBUENO, C.C.:1592:240:Npt_BR
sigepi.autor.atividadeGONCALVES, J.A.C.:924:240:Npt_BR
sigepi.autor.atividadePETRI, A.R.:9310:240:Spt_BR
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