Performance characterization of dosimeters based on radiation-hard silicon diodes in gamma radiation processing

Página do item simplificado
dc.contributor.authorBUENO, C.C.pt_BR
dc.contributor.authorCAMARGO, F.pt_BR
dc.contributor.authorGONCALVES, J.A.C.pt_BR
dc.contributor.authorPASCOALINO, K.pt_BR
dc.contributor.authorMANGIAROTTI, A.pt_BR
dc.contributor.authorTUOMINEN, E.pt_BR
dc.contributor.authorHARKONEN, J.pt_BR
dc.coverageInternacionalpt_BR
dc.date.accessioned2022-04-20T14:30:28Z
dc.date.available2022-04-20T14:30:28Z
dc.date.issued2022pt_BR
dc.description.abstractThe dosimetric response of silicon diodes produced with distinct engineering technologies, Magnetic Czochralski (MCz), and standard Float Zone (Fz), has been investigated, aiming at their use for online dosimeters in gamma radiation processing applications. The p+-n-n+ junction diodes, 300 µm thick with an active area of 25 mm2, are operated as online radiation dosimeters in the short-circuit current mode. In this case, the key dosimetric quantity is the dose rate, which is correlated with the output current from the diode subjected to radiation. Thus, the dose is obtained offline by the integration of the corresponding current signal. The irradiations are performed with an industrial Gammacell 60Co facility at 2.3–2.44 kGy/h covering doses up to 275 kGy. Under continuous irradiation, both diodes delivered current signals whose intensities decreased with accumulated doses. Mitigation of this decay has been accomplished by pre-irradiating the devices to 700 kGy. Polynomial functions best represent the dose responses for either pristine or preirradiated diodes. The relevant dosimetric parameters as response stability, charge sensitivity, and repeatability of current signals (<5%) reveal the better performance of the MCz diode. It is important to note that the whole dataset fully complies with the international standard protocols for routine dosimeters in radiation processing dosimetry. Regarding radiation damage, which in unbiased diodes manifests primarily in the decay of current sensitivity, the results also showed greater tolerance of the MCz diode. Based on these studies, large availability, and better cost-effectiveness, it is possible to endorse the potential use of MCz devices as online routine dosimeters in radiation processing applications. However, the data reproducibility with the accumulated dose, the dose lifespan, and the effect of the irradiation conditions (e.g., temperature, relative humidity, and dose fractionating) remain to be investigated. Works in this direction are currently in progress.pt_BR
dc.description.sponsorshipInstituto de Pesquisas Energéticas e Nucleares (IPEN)pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipIDIPEN: DPDE Edital 2017pt_BR
dc.description.sponsorshipIDFAPESP: 05/00258-1pt_BR
dc.description.sponsorshipIDCNPq: 133904/2008-3; 311915/2020-5pt_BR
dc.format.extent1-11pt_BR
dc.identifier.citationBUENO, C.C.; CAMARGO, F.; GONCALVES, J.A.C.; PASCOALINO, K.; MANGIAROTTI, A.; TUOMINEN, E.; HARKONEN, J. Performance characterization of dosimeters based on radiation-hard silicon diodes in gamma radiation processing. <b>Frontiers in Sensors</b>, v. 3, p. 1-11, 2022. DOI: <a href="https://dx.doi.org/10.3389/fsens.2022.770482">10.3389/fsens.2022.770482</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/32971.
dc.identifier.doi10.3389/fsens.2022.770482pt_BR
dc.identifier.issn2673-5067pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.percentilfiSem Percentilpt_BR
dc.identifier.percentilfiCiteScoreSem Percentil CiteScorept_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/32971
dc.identifier.vol3pt_BR
dc.relation.ispartofFrontiers in Sensorspt_BR
dc.rightsopenAccesspt_BR
dc.subjectsilicon diodes
dc.subjectradiations
dc.subjectprocessing
dc.subjectczochralski method
dc.subjectgamma dosimetry
dc.titlePerformance characterization of dosimeters based on radiation-hard silicon diodes in gamma radiation processingpt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorKELLY CRISTINA DA SILVA PASCOALINO
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.autorFABIO DE CAMARGO
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.codigoautor6608
ipen.codigoautor924
ipen.codigoautor2764
ipen.codigoautor1592
ipen.contributor.ipenauthorKELLY CRISTINA DA SILVA PASCOALINO
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.contributor.ipenauthorFABIO DE CAMARGO
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.date.recebimento22-04
ipen.identifier.fiSem F.I.pt_BR
ipen.identifier.fiCiteScoreSem CiteScorept_BR
ipen.identifier.ipendoc28666pt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublication3635b910-bf6b-403f-9a41-6b16dcd43d8a
relation.isAuthorOfPublication76fdc4d1-7624-4332-a9d0-f06826000679
relation.isAuthorOfPublicationbf2a9a35-1434-4c5d-9bf8-a87d542cb728
relation.isAuthorOfPublicationfa74399b-83a0-4f46-91e0-da469104d3f6
relation.isAuthorOfPublication.latestForDiscoveryfa74399b-83a0-4f46-91e0-da469104d3f6
sigepi.autor.atividadePASCOALINO, K.:6608:240:Npt_BR
sigepi.autor.atividadeGONCALVES, J.A.C.:924:240:Npt_BR
sigepi.autor.atividadeCAMARGO, F.:2764:240:Npt_BR
sigepi.autor.atividadeBUENO, C.C.:1592:240:Spt_BR
Pacote Original
Agora exibindo 1 - 1 de 1
Imagem de Miniatura
Nome:
28666.pdf
Tamanho:
1.97 MB
Formato:
Adobe Portable Document Format
Descrição:
Baixar
Licença do Pacote
Agora exibindo 1 - 1 de 1
Nenhuma Miniatura disponível
Nome:
license.txt
Tamanho:
1.71 KB
Formato:
Item-specific license agreed upon to submission
Descrição:
Baixar
Coleções
Periódicos