Performance of DOFZ diode as on-line gamma dosimeter in radiation processing
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2008
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IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD
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In this work, we report on results obtained with two
rad-hard Diffusion Oxygenated Float Zone (DOFZ) silicon diodes
as on-line gamma dosimeter in radiation processing. One device
was not irradiated before using as a dosimeter, while the other
received a gamma pre-dose of 700 kGy.
The samples irradiation was performed using a 60Co source at
a dose rate of 2.50 kGy/h from 5 kGy up 275 kGy. It was
investigated the dosimetric response of these devices, operating in
short-circuit current mode, with respect to the sensitivity
dependence on dose and charge-dose linearity. Without any predose, the diode exhibited a significant sensitivity decrease due to
radiation induced point-defects in the crystal bulk. Conversely,
the pre-irradiated device presented very stable current signals
with a relative charge sensitivity of 0.9 mC/kGy.
Como referenciar
CAMARGO, F.; GONCALVES, J.A.C.; TUOMINEN, E.; HARKONEN, J.; BUENO, C.C. Performance of DOFZ diode as on-line gamma dosimeter in radiation processing. In: IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, October 19-25, 2008. Proceedings... p. 2565-2567. DOI: 10.1109/NSSMIC.2008.4774880. Disponível em: http://repositorio.ipen.br/handle/123456789/16041. Acesso em: 19 Feb 2025.
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