Radiation damage effects in standard float zone silicon diodes
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2009
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INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 9th; MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 16th; MEETING ON NUCLEAR INDUSTRY, 1st
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The aim of this work was to study the radiation damage effects on the electrical properties of standard float zone
diodes (STFZ). Such effects were evaluated by measuring the current and capacitance of these devices as a
function of the reverse voltage. For comparison, current and capacitance measurements were carried out with a
non-irradiated STFZ device. The irradiation was performed in the Radiation Technology Center (CTR) at IPENCNEN/SP using a 60Co irradiator (Gammacell 220 – Nordion) with a dose rate of about 2.2 kGy/h. Samples
were irradiated at room temperature in steps variable from 50 kGy up 140 kGy which lead to an accumulated
dose of 460 kGy. The results obtained have shown that the upper dose limit for a “damageless” STFZ diode is
about 50 kGy.
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PASCOALINO, KELLY C.S.; CAMARGO, FABIO; BARBOSA, RENATA F.; GONCALVES, JOSEMARY A.C.; TOBIAS, CARMEN C.B. Radiation damage effects in standard float zone silicon diodes. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 9th; MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 16th; MEETING ON NUCLEAR INDUSTRY, 1st, September 27 - October 2, 2009, Rio de Janeiro, RJ. Proceedings... Disponível em: http://repositorio.ipen.br/handle/123456789/16506. Acesso em: 19 Feb 2025.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.