Study of the doppler broadening of positron annihilation radiation in silicon

NASCIMENTO, E.; HELENE, O.; VANIN, V.R.; MORALLES, M.

Study of the doppler broadening of positron annihilation radiation in silicon

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2005

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MAURICIO MORALLES

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Brazilian Journal of Physics

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Resumo

We report the measurement of Doppler broadening annihilation radiation in silicon, using 22Na as a positron source, and two Ge detectors arrangement. The two-dimensional coincidence energy spectrum was fitted using a model function. The model function included at rest positron annihilation with valence band, 2p, 2s, and 1s electrons. In-flight positron annihilation was also fitted. The detectors response functions included backscattering, and a combination of Compton effects, pileup, ballistic deficit, and pulse shaping problems. The obtained results agree well with the literature.

Como referenciar

NASCIMENTO, E.; HELENE, O.; VANIN, V.R.; MORALLES, M. Study of the doppler broadening of positron annihilation radiation in silicon. Brazilian Journal of Physics, v. 35, n. 3B, p. 782-784, 2005. DOI: 10.1590/S0103-97332005000500016. Disponível em: http://repositorio.ipen.br/handle/123456789/7642. Acesso em: 16 Mar 2025.

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