Analysis and measurement of the non-linear refractive index of SiOxNy using pedestal waveguides

dc.contributor.authorSIERRA, JULIAN H.pt_BR
dc.contributor.authorCARVALHO, DANIEL O.pt_BR
dc.contributor.authorSAMAD, RICARDO E.pt_BR
dc.contributor.authorRANGEL, RICARDO C.pt_BR
dc.contributor.authorALAYO, MARCO I.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoSYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, 34thpt_BR
dc.date.accessioned2020-03-26T14:06:31Z
dc.date.available2020-03-26T14:06:31Z
dc.date.eventoAugust 26-30, 2019pt_BR
dc.description.abstractIn this work, the non-linear refractive index (n2) of silicon oxynitride (SiOxNy) is determined, obtaining a value for this material of n2 = 2.11×10-19 m2/W. The results demonstrate that this material has interesting properties for the development of non-linear optical devices. The paper presents in detail the waveguide fabrication process using the pedestal technique, which allows using different materials since it does not require etching to define the sidewalls of the waveguides. We show the results of the measurement of the n2 employing the non-linear optical phenomena of Self-Phase Modulation (SPM).pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt_BR
dc.description.sponsorshipIDCNPq: 432088/2018-0; 305447/2017-3pt_BR
dc.description.sponsorshipIDCAPES: 88882.333330/2019-01pt_BR
dc.event.siglaSBMicropt_BR
dc.identifier.citationSIERRA, JULIAN H.; CARVALHO, DANIEL O.; SAMAD, RICARDO E.; RANGEL, RICARDO C.; ALAYO, MARCO I. Analysis and measurement of the non-linear refractive index of SiOxNy using pedestal waveguides. In: SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, 34th, August 26-30, 2019, São Paulo, SP. <b>Proceedings...</b> Piscataway, NJ, USA: IEEE, 2019. DOI: <a href="https://dx.doi.org/10.1109/SBMicro.2019.8919392">10.1109/SBMicro.2019.8919392</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/30962.
dc.identifier.doi10.1109/SBMicro.2019.8919392pt_BR
dc.identifier.orcid0000-0001-7762-8961pt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7762-8961
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/30962
dc.localPiscataway, NJ, USApt_BR
dc.local.eventoSão Paulo, SPpt_BR
dc.publisherIEEEpt_BR
dc.rightsclosedAccesspt_BR
dc.subjectoptical equipment
dc.subjectphotons
dc.subjectsilicon nitrides
dc.subjectsilicon oxides
dc.subjectmicroelectronics
dc.titleAnalysis and measurement of the non-linear refractive index of SiOxNy using pedestal waveguidespt_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorRICARDO ELGUL SAMAD
ipen.codigoautor909
ipen.contributor.ipenauthorRICARDO ELGUL SAMAD
ipen.date.recebimento20-03
ipen.event.datapadronizada2019pt_BR
ipen.identifier.ipendoc26762pt_BR
ipen.notas.internasProceedingspt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublicationb9c43c0c-87a6-4ebd-92ff-2515c4ac1d34
relation.isAuthorOfPublication.latestForDiscoveryb9c43c0c-87a6-4ebd-92ff-2515c4ac1d34
sigepi.autor.atividadeSAMAD, RICARDO E.:909:930:Npt_BR

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