A comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry

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dc.contributor.authorSANTOS, T.C. dospt_BR
dc.contributor.authorGONCALVES, J.A.C.pt_BR
dc.contributor.authorVASQUES, M.M.pt_BR
dc.contributor.authorTOBIAS, C.C.B.pt_BR
dc.contributor.authorNEVES JUNIOR, W.F.P.pt_BR
dc.contributor.authorHADDAD, C.M.K.pt_BR
dc.contributor.authorHARKONEN, J.pt_BR
dc.contributor.editorVANIN, VITO R.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoBRAZILIAN WORKSHOP ON NUCLEAR PHYSICS, 33rdpt_BR
dc.date.accessioned2014-11-17T17:09:16Zpt_BR
dc.date.accessioned2014-11-18T17:00:30Zpt_BR
dc.date.accessioned2015-04-01T20:29:57Z
dc.date.available2014-11-17T17:09:16Zpt_BR
dc.date.available2014-11-18T17:00:30Zpt_BR
dc.date.available2015-04-01T20:29:57Z
dc.date.eventoSeptember 7-11, 2010pt_BR
dc.format.extent228-232pt_BR
dc.identifier.citationSANTOS, T.C. dos; GONCALVES, J.A.C.; VASQUES, M.M.; TOBIAS, C.C.B.; NEVES JUNIOR, W.F.P.; HADDAD, C.M.K.; HARKONEN, J. A comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetry. In: VANIN, VITO R. (ed.). In: BRAZILIAN WORKSHOP ON NUCLEAR PHYSICS, 33rd, September 7-11, 2010, Campos do Jordão, SP. <b>Proceedings...</b> p. 228-232. Disponível em: http://repositorio.ipen.br/handle/123456789/12499.
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/12499pt_BR
dc.local.eventoCampos do Jordão, SPpt_BR
dc.publisherAmerican Institute of Physicspt_BR
dc.rightsopenAccesspt_BR
dc.subjectsilicon diodespt_BR
dc.subjectelectron beamspt_BR
dc.subjectdosimetrypt_BR
dc.subjectradiotherapypt_BR
dc.titleA comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCz) silicon diodes in radiotherapy electron beams dosimetrypt_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorWELLINGTON FURTADO PIMENTA NEVES
ipen.autorCECÍLIA M. K. HADDAD
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.autorTHAIS CAVALHERI DOS SANTOS
ipen.codigoautor11194
ipen.codigoautor10526
ipen.codigoautor1592
ipen.codigoautor924
ipen.codigoautor7953
ipen.contributor.ipenauthorWELLINGTON FURTADO PIMENTA NEVES
ipen.contributor.ipenauthorCECÍLIA M. K. HADDAD
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.contributor.ipenauthorTHAIS CAVALHERI DOS SANTOS
ipen.date.recebimento12-04pt_BR
ipen.event.datapadronizada2010pt_BR
ipen.identifier.ipendoc17468pt_BR
ipen.notas.internasProceedingspt_BR
ipen.type.genreArtigo
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sigepi.autor.atividadeSANTOS, T.C. DOS:7953:240:Spt_BR
sigepi.autor.atividadeGONÇALVES, J.A.C.:924:240:Npt_BR
sigepi.autor.atividadeVASQUES, M.M.:-1:-1:Npt_BR
sigepi.autor.atividadeTOBIAS, C.C.B.:1592:240:Npt_BR
sigepi.autor.atividadeNEVES JUNIOR, W.F.P.:11194:-1:Npt_BR
sigepi.autor.atividadeHADDAD, C.M.K.:10526:-1:Npt_BR
sigepi.autor.atividadeHARKONEN, J.:-1:-1:Npt_BR

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