Optimization of BGO Er/Yb doped pedestal waveguide amplifiers with Si nanostructures
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2019
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SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE
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In this work we review the recent advances in
pedestal waveguide amplifier fabrication. The improvement of
conventional photolithography and plasma etching methods
brings advantages that benefit light guiding and reduce
propagation losses, mainly in the 3rd telecommunication
windows (λ~1550 nm). Yb3+/Er3+ codoped Bi2O3-GeO2 thin
films, with and without Si nanostructures, are obtained by RF
Magnetron sputtering deposition and are used as core layer of
500 nm height in the pedestal waveguides. Choosing an
appropriate amount of these silicon nanostructures inside the
rare-earth waveguides we achieve pump light scattering and at
the same time very little scattering at the signal wavelength.
The overall effect is again enhancement of 50% thus opening
possibilities for potential applications in integrated optics.
Como referenciar
SILVA, DIEGO S. da; KASSAB, LUCIANA R.P.; JIMENEZ-VILLAR, ERNESTO; WETTER, NIKLAUS U. Optimization of BGO Er/Yb doped pedestal waveguide amplifiers with Si nanostructures. In: SBFOTON INTERNATIONAL OPTICS AND PHOTONICS CONFERENCE, October 7-9, 2019, São Paulo, SP. Proceedings... DOI: 10.1109/SBFoton-IOPC.2019.8910247. Disponível em: http://repositorio.ipen.br/handle/123456789/30288. Acesso em: 24 Mar 2026.
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