Use of a rad-hard silicon diode for photon spectrometry
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2004
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IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD
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-In this paper we describe the performance of an ionimplanted diode (Al/p+
/n/n+
/Al), developed in the framework of
R&D programs for the future CMS experiment at LHC, for
detection and spectrometry of X-and γ-rays envisaging its use in
characterization of porous microstructures by X-Ray
microtomography. The effects of the reverse bias on both the
electronic noise and the diode energy resolution were studied
using 57Co, 133Ba and 241Am radioactive sources at room
temperature. In the energy range between 30 and 360 keV, it was
obtained reasonable good energy resolution (e.g., FWHM = 4.2
keV for 121.6 keV gamma ray from 57Co). In the same energy
range, measurements of full-energy peak efficiencies were carried
out and compared with the theoretical values. The results have
demonstrated that this diode is appropriate for direct detection of
low energy electromagnetic radiation.
Como referenciar
GONCALVES, J.A.C.; BUENO, C.C.; CAMARGO, F.; CORREA, A.A.S.; PINTO, J.K.C. Use of a rad-hard silicon diode for photon spectrometry. In: IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, Oct. 16-22, 2004, Roma, Italy. Proceedings... DOI: 10.1109/NSSMIC.2004.1462622. Disponível em: http://repositorio.ipen.br/handle/123456789/17520. Acesso em: 30 Dec 2025.
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