Use of a PIN photodiode for dosimetric purposes in radiation processing

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dc.contributor.authorFERREIRA, DANILO C.pt_BR
dc.contributor.authorCAMARGO, FABIO dept_BR
dc.contributor.authorNAPOLITANO, CELIA M.pt_BR
dc.contributor.authorGONCALVES, JOSEMARY A.C.pt_BR
dc.contributor.authorKHOURI, HELEN J.pt_BR
dc.contributor.authorBUENO, CARMEN C.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoINTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 8th/ MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 15thpt_BR
dc.date.accessioned2014-11-17T17:04:10Zpt_BR
dc.date.accessioned2014-11-18T19:08:36Zpt_BR
dc.date.accessioned2015-04-02T04:38:40Z
dc.date.available2014-11-17T17:04:10Zpt_BR
dc.date.available2014-11-18T19:08:36Zpt_BR
dc.date.available2015-04-02T04:38:40Z
dc.date.eventoSept. 30 - Oct. 5, 2007pt_BR
dc.description.abstractThis work examines the possibility of using a silicon PIN photodiode (SFH 00206) as a rotine dosimeter for irradiation processes that have been performed with a Gamma Cell facility in the Centro de Tecnologia das Radiações (CTR) at IPEN/CNEN-SP. The diode is encapsulated in a polymer plastic of 1.2 mm thickness and it was connected in the photovoltaic mode to the input of a Keithley 617 electrometer. The current response of the device was performed using a 60Co-gamma source, with a dose rate of about 2.94 kGy/h. The diode’s response as a function of the gamma-ray doses in the interval of 5 Gy to 100 Gy has been investigated and the results have demonstrated a linear behavior in the whole range.
dc.event.siglaINAC; ENAN; ENFIRpt_BR
dc.identifier.citationFERREIRA, DANILO C.; CAMARGO, FABIO de; NAPOLITANO, CELIA M.; GONCALVES, JOSEMARY A.C.; KHOURI, HELEN J.; BUENO, CARMEN C. Use of a PIN photodiode for dosimetric purposes in radiation processing. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 8th/ MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 15th, Sept. 30 - Oct. 5, 2007, Santos, SP. <b>Proceedings...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/11863.
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/11863pt_BR
dc.local.eventoSantos, SPpt_BR
dc.publisherSao Paulo: ABEN, 2007pt_BR
dc.rightsopenAccesspt_BR
dc.subjectcobalt 60pt_BR
dc.subjectdose ratespt_BR
dc.subjectdose-response relationshipspt_BR
dc.subjectdosimetrypt_BR
dc.subjectelectrometerspt_BR
dc.subjectgamma radiationpt_BR
dc.subjectgamma sourcespt_BR
dc.subjectphotocurrentspt_BR
dc.subjectphotodiodespt_BR
dc.subjectsiliconpt_BR
dc.titleUse of a PIN photodiode for dosimetric purposes in radiation processingpt_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.autorCELIA MARINA NAPOLITANO
ipen.autorFABIO DE CAMARGO
ipen.autorDANILO CARDENUTO FERREIRA
ipen.codigoautor1592
ipen.codigoautor924
ipen.codigoautor1059
ipen.codigoautor2764
ipen.codigoautor3877
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.contributor.ipenauthorCELIA MARINA NAPOLITANO
ipen.contributor.ipenauthorFABIO DE CAMARGO
ipen.contributor.ipenauthorDANILO CARDENUTO FERREIRA
ipen.date.recebimento07-12pt_BR
ipen.event.datapadronizada2007pt_BR
ipen.identifier.ipendoc12088pt_BR
ipen.notas.internasProceedingspt_BR
ipen.type.genreArtigo
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sigepi.autor.atividadeFERREIRA, DANILO C.:3877:5:Spt_BR
sigepi.autor.atividadeCAMARGO, FABIO DE:2764:5:Npt_BR
sigepi.autor.atividadeNAPOLITANO, CELIA M.:1059:2:Npt_BR
sigepi.autor.atividadeGONCALVES, JOSEMARY A.C.:924:5:Npt_BR
sigepi.autor.atividadeBUENO, CARMEN C.:1592:5:Npt_BR

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