Radiation damage effects in standard float zone silicon diodes

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dc.contributor.authorPASCOALINO, KELLY C.S.pt_BR
dc.contributor.authorCAMARGO, FABIOpt_BR
dc.contributor.authorBARBOSA, RENATA F.pt_BR
dc.contributor.authorGONCALVES, JOSEMARY A.C.pt_BR
dc.contributor.authorTOBIAS, CARMEN C.B.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoINTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 9th; MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 16th; MEETING ON NUCLEAR INDUSTRY, 1stpt_BR
dc.date.accessioned2014-11-17T18:18:44Zpt_BR
dc.date.accessioned2014-11-18T18:25:53Zpt_BR
dc.date.accessioned2015-04-02T05:56:26Z
dc.date.available2014-11-17T18:18:44Zpt_BR
dc.date.available2014-11-18T18:25:53Zpt_BR
dc.date.available2015-04-02T05:56:26Z
dc.date.eventoSeptember 27 - October 2, 2009pt_BR
dc.description.abstractThe aim of this work was to study the radiation damage effects on the electrical properties of standard float zone diodes (STFZ). Such effects were evaluated by measuring the current and capacitance of these devices as a function of the reverse voltage. For comparison, current and capacitance measurements were carried out with a non-irradiated STFZ device. The irradiation was performed in the Radiation Technology Center (CTR) at IPENCNEN/SP using a 60Co irradiator (Gammacell 220 – Nordion) with a dose rate of about 2.2 kGy/h. Samples were irradiated at room temperature in steps variable from 50 kGy up 140 kGy which lead to an accumulated dose of 460 kGy. The results obtained have shown that the upper dose limit for a “damageless” STFZ diode is about 50 kGy.
dc.event.siglaINAC; ENAN; ENFIR; ENINpt_BR
dc.identifier.citationPASCOALINO, KELLY C.S.; CAMARGO, FABIO; BARBOSA, RENATA F.; GONCALVES, JOSEMARY A.C.; TOBIAS, CARMEN C.B. Radiation damage effects in standard float zone silicon diodes. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE; MEETING ON NUCLEAR APPLICATIONS, 9th; MEETING ON REACTOR PHYSICS AND THERMAL HYDRAULICS, 16th; MEETING ON NUCLEAR INDUSTRY, 1st, September 27 - October 2, 2009, Rio de Janeiro, RJ. <b>Proceedings...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/16506.
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/16506pt_BR
dc.local.eventoRio de Janeiro, RJpt_BR
dc.publisherSao Paulo: ABEN, 2009pt_BR
dc.rightsopenAccesspt_BR
dc.subjectcapacitancept_BR
dc.subjectcobalt 60pt_BR
dc.subjectdose limitspt_BR
dc.subjectdose ratespt_BR
dc.subjectelectric currentspt_BR
dc.subjectelectric potentialpt_BR
dc.subjectexperimental datapt_BR
dc.subjectirradiation plantspt_BR
dc.subjectphysical radiation effectspt_BR
dc.subjectradiation dosespt_BR
dc.subjectsilicon diodespt_BR
dc.titleRadiation damage effects in standard float zone silicon diodespt_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorRENATA DE FARIA BARBOSA
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.autorFABIO DE CAMARGO
ipen.autorKELLY CRISTINA DA SILVA PASCOALINO
ipen.codigoautor8002
ipen.codigoautor1592
ipen.codigoautor924
ipen.codigoautor2764
ipen.codigoautor6608
ipen.contributor.ipenauthorRENATA DE FARIA BARBOSA
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.contributor.ipenauthorFABIO DE CAMARGO
ipen.contributor.ipenauthorKELLY CRISTINA DA SILVA PASCOALINO
ipen.date.recebimento09-10pt_BR
ipen.event.datapadronizada2009pt_BR
ipen.identifier.ipendoc15090pt_BR
ipen.notas.internasProceedingspt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublication39639fcc-3792-4e96-8830-d0652f41677a
relation.isAuthorOfPublicationfa74399b-83a0-4f46-91e0-da469104d3f6
relation.isAuthorOfPublication76fdc4d1-7624-4332-a9d0-f06826000679
relation.isAuthorOfPublicationbf2a9a35-1434-4c5d-9bf8-a87d542cb728
relation.isAuthorOfPublication3635b910-bf6b-403f-9a41-6b16dcd43d8a
relation.isAuthorOfPublication.latestForDiscovery3635b910-bf6b-403f-9a41-6b16dcd43d8a
sigepi.autor.atividadePASCOALINO, KELLY C.S.:6608:240:Spt_BR
sigepi.autor.atividadeCAMARGO, FABIO:2764:-1:Npt_BR
sigepi.autor.atividadeBARBOSA, RENATA F.:8002:240:Npt_BR
sigepi.autor.atividadeGONÇALVES, JOSEMARY A.C.:924:240:Npt_BR
sigepi.autor.atividadeTOBIAS, CARMEN C.B.:1592:240:Npt_BR
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