A new route of grow ZnO seed layer using the SILAR method
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2013
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PROCEEDINGS OF NANOTECH, MICROTECH, BIOTECH, CLEANTECH JOINT 2013 CONFERENCE
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In dye-sensitized solar cells (DSSC), the SnO2 film is
used as a transparent conducting electrode. Onto this layer,
the n-type semiconductor ZnO is deposited to support the
dye. The ZnO/SnO2 interface exhibits electrical resistance
due to mis-orientation in the crystalline structures of the
two oxides, which is a deleterious factor. In this
investigation, the successive ionic layer adsorption reaction
(SILAR) method was used to grow the ZnO seed layer with
low mis-orientation. In this new process, we used two
cationic baths with different compositions. First, the
counter-ion Zn(NO)3 solution was used to form the nuclei
by adsoption of Zn2+ on the substrate. This was then
converted to ZnO by immersion in an anionic bath.
Susequently the zinc acetate bath was used for growth. This
approach avoids twins parallel to the (0001) plane of the
ZnO crystalline structure. The micrographs showed a dense
layer and homogeneous petal array, with high orientation in
the C axis, which improves electron transport.
Como referenciar
GALAGO, E.; SERNA, M.M.; RAMANATHAN, L.V. A new route of grow ZnO seed layer using the SILAR method. In: PROCEEDINGS OF NANOTECH, MICROTECH, BIOTECH, CLEANTECH JOINT 2013 CONFERENCE, May 12-16, 2013, Washington, USA. Proceedings... Disponível em: http://repositorio.ipen.br/handle/123456789/16822. Acesso em: 08 Oct 2024.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.