Performance of DOFZ diode as on-line gamma dosimeter in radiation processing

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dc.contributor.authorCAMARGO, F.pt_BR
dc.contributor.authorGONCALVES, J.A.C.pt_BR
dc.contributor.authorTUOMINEN, E.pt_BR
dc.contributor.authorHARKONEN, J.pt_BR
dc.contributor.authorBUENO, C.C.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoIEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORDpt_BR
dc.date.accessioned2014-11-17T18:04:25Zpt_BR
dc.date.accessioned2014-11-18T18:19:37Zpt_BR
dc.date.accessioned2015-04-02T01:30:38Z
dc.date.available2014-11-17T18:04:25Zpt_BR
dc.date.available2014-11-18T18:19:37Zpt_BR
dc.date.available2015-04-02T01:30:38Z
dc.date.eventoOctober 19-25, 2008pt_BR
dc.description.abstractIn this work, we report on results obtained with two rad-hard Diffusion Oxygenated Float Zone (DOFZ) silicon diodes as on-line gamma dosimeter in radiation processing. One device was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 700 kGy. The samples irradiation was performed using a 60Co source at a dose rate of 2.50 kGy/h from 5 kGy up 275 kGy. It was investigated the dosimetric response of these devices, operating in short-circuit current mode, with respect to the sensitivity dependence on dose and charge-dose linearity. Without any predose, the diode exhibited a significant sensitivity decrease due to radiation induced point-defects in the crystal bulk. Conversely, the pre-irradiated device presented very stable current signals with a relative charge sensitivity of 0.9 mC/kGy.
dc.format.extent2565-2567pt_BR
dc.identifier.citationCAMARGO, F.; GONCALVES, J.A.C.; TUOMINEN, E.; HARKONEN, J.; BUENO, C.C. Performance of DOFZ diode as on-line gamma dosimeter in radiation processing. In: IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, October 19-25, 2008. <b>Proceedings...</b> p. 2565-2567. DOI: <a href="https://dx.doi.org/10.1109/NSSMIC.2008.4774880">10.1109/NSSMIC.2008.4774880</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/16041.
dc.identifier.doi10.1109/NSSMIC.2008.4774880
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/16041pt_BR
dc.rightsopenAccesspt_BR
dc.subjectsilicon oxidespt_BR
dc.subjectgamma dosimetrypt_BR
dc.subjectradiationspt_BR
dc.subjectprocessingpt_BR
dc.subjectreal time systemspt_BR
dc.titlePerformance of DOFZ diode as on-line gamma dosimeter in radiation processingpt_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.autorFABIOLA DE ALMEIDA CAMARGO
ipen.codigoautor1592
ipen.codigoautor924
ipen.codigoautor3490
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.contributor.ipenauthorFABIOLA DE ALMEIDA CAMARGO
ipen.date.recebimento11-06pt_BR
ipen.event.datapadronizada2008pt_BR
ipen.identifier.ipendoc16672pt_BR
ipen.notas.internasProceedingspt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublicationfa74399b-83a0-4f46-91e0-da469104d3f6
relation.isAuthorOfPublication76fdc4d1-7624-4332-a9d0-f06826000679
relation.isAuthorOfPublicationdb786116-99d1-4bb0-a3bd-d815b45995da
relation.isAuthorOfPublication.latestForDiscoverydb786116-99d1-4bb0-a3bd-d815b45995da
sigepi.autor.atividadeCAMARGO, F.:3490:910:Spt_BR
sigepi.autor.atividadeGONÇALVES, J.A.C.:924:240:Npt_BR
sigepi.autor.atividadeBUENO, C.C.:1592:240:Npt_BR
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