Eletronic response of a photodiode coupled to a boron thin film

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dc.contributor.authorCOSTA, PRISCILA
dc.contributor.authorCOSTA, FABIO E.
dc.contributor.authorRAELE, MARCUS P.
dc.contributor.authorZAHN, GUILHERME S.
dc.contributor.authorGERALDO, BIANCA
dc.contributor.authorVIEIRA JUNIOR, NILSON D.
dc.contributor.authorSAMAD, RICARDO E.
dc.contributor.authorGENEZINI, FREDERICO A.
dc.coverageInternacionalpt_BR
dc.creator.eventoINTERNATIONAL NUCLEAR ATLANTIC CONFERENCEpt_BR
dc.date.accessioned2018-01-15T17:10:48Z
dc.date.available2018-01-15T17:10:48Z
dc.date.eventoOctober 22-27, 2017pt_BR
dc.description.abstractA portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode.pt_BR
dc.event.siglaINACpt_BR
dc.identifier.citationCOSTA, PRISCILA; COSTA, FABIO E.; RAELE, MARCUS P.; ZAHN, GUILHERME S.; GERALDO, BIANCA; VIEIRA JUNIOR, NILSON D.; SAMAD, RICARDO E.; GENEZINI, FREDERICO A. Eletronic response of a photodiode coupled to a boron thin film. In: INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE, October 22-27, 2017, Belo Horizonte, MG. <b>Proceedings...</b> Rio de Janeiro, RJ: Associação Brasileira de Energia Nuclear, 2017. Disponível em: http://repositorio.ipen.br/handle/123456789/28322.
dc.identifier.orcidhttps://orcid.org/0000-0002-6318-6805
dc.identifier.orcidhttps://orcid.org/0000-0001-7762-8961
dc.identifier.orcidhttps://orcid.org/0000-0003-0092-9357
dc.identifier.orcidhttps://orcid.org/0000-0003-3237-8588
dc.identifier.orcidhttps://orcid.org/0000-0002-6461-6766
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/28322
dc.localRio de Janeiro, RJpt_BR
dc.local.eventoBelo Horizonte, MGpt_BR
dc.publisherAssociação Brasileira de Energia Nuclearpt_BR
dc.rightsopenAccesspt_BR
dc.subjectamericium 241
dc.subjectboron
dc.subjectelectrical properties
dc.subjectenergy spectra
dc.subjectbrazilian cnen
dc.subjectneutron detectors
dc.subjectphotodiodes
dc.subjectportable equipment
dc.subjectthermal neutrons
dc.subjectthin films
dc.titleEletronic response of a photodiode coupled to a boron thin filmpt_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorBIANCA GERALDO
ipen.autorFREDERICO ANTONIO GENEZINI
ipen.autorRICARDO ELGUL SAMAD
ipen.autorNILSON DIAS VIEIRA JUNIOR
ipen.autorGUILHERME SOARES ZAHN
ipen.autorMARCUS PAULO RAELE
ipen.autorFABIO EDUARDO DA COSTA
ipen.autorPRISCILA COSTA
ipen.codigoautor9046
ipen.codigoautor2045
ipen.codigoautor909
ipen.codigoautor1582
ipen.codigoautor950
ipen.codigoautor3272
ipen.codigoautor384
ipen.codigoautor3965
ipen.contributor.ipenauthorBIANCA GERALDO
ipen.contributor.ipenauthorFREDERICO ANTONIO GENEZINI
ipen.contributor.ipenauthorRICARDO ELGUL SAMAD
ipen.contributor.ipenauthorNILSON DIAS VIEIRA JUNIOR
ipen.contributor.ipenauthorGUILHERME SOARES ZAHN
ipen.contributor.ipenauthorMARCUS PAULO RAELE
ipen.contributor.ipenauthorFABIO EDUARDO DA COSTA
ipen.contributor.ipenauthorPRISCILA COSTA
ipen.date.recebimento18-01pt_BR
ipen.event.datapadronizada2017pt_BR
ipen.identifier.ipendoc24157pt_BR
ipen.notas.internasProceedingspt_BR
ipen.type.genreArtigo
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sigepi.autor.atividadeCOSTA, PRISCILA:3965:310:Spt_BR
sigepi.autor.atividadeCOSTA, FABIO E.:384:240:Npt_BR
sigepi.autor.atividadeRAELE, MARCUS P.:3272:910:Npt_BR
sigepi.autor.atividadeZAHN, GUILHERME S.:950:310:Npt_BR
sigepi.autor.atividadeGERALDO, BIANCA:9046:1120:Npt_BR
sigepi.autor.atividadeVIEIRA JUNIOR, NILSON D.:1582:930:Npt_BR
sigepi.autor.atividadeSAMAD, RICARDO E.:909:930:Npt_BR
sigepi.autor.atividadeGENEZINI, FREDERICO A.:2045:310:Npt_BR
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