A low-cost small-size commercial PIN photodiode

dc.contributor.authorMALAFRONTE, A.A.pt_BR
dc.contributor.authorPETRI, A.R.pt_BR
dc.contributor.authorGONCALVES, J.A.C.pt_BR
dc.contributor.authorBARROS, S.F.pt_BR
dc.contributor.authorBUENO, C.C.pt_BR
dc.contributor.authorMAIDANA, N.L.pt_BR
dc.contributor.authorMANGIAROTTI, A.pt_BR
dc.contributor.authorMARTINS, M.N.pt_BR
dc.contributor.authorQUIVY, A.A.pt_BR
dc.contributor.authorVANIN, V.R.pt_BR
dc.coverageInternacionalpt_BR
dc.date.accessioned2020-12-07T18:27:47Z
dc.date.available2020-12-07T18:27:47Z
dc.date.issued2021pt_BR
dc.description.abstractSilicon PIN (p-type-intrinsic-n-type) photodiodes are well suited as particle detectors. Here the interest is on a low-cost solution by repurposing a commercial device meant to be used as a light sensor. The intended application is to measure the energy spectra of electrons scattered by thin metallic foils covering small angles close to the beam of the accelerator. The main requirements for a suitable device are: 1) a low-cost solution to allow frequent replacements; 2) a small size to avoid as much as possible an unused area that contributes with unnecessary capacitance; 3) a good energy resolution; and 4) an easy repurposing as a charged-particle detector. The photodiode type BPX 65 manufactured by Osram® fulfils well these requirements. Four samples of these commercial devices have been electrically characterised with respect to reverse current and depleted-region capacitance. At the selected working point of 18 V, comfortably below the maximum rating of 20 V recommended by the manufacturer for continuous operation, the total thickness of the depleted and intrinsic regions is estimated to be (60 ± 3) μm. For the four samples considered, the measured reverse currents for a reverse bias of 18 V are around 0.1 nA, well below the typical value specified by the manufacturer (1 nA). To evaluate the performance of the device as a detector, energy spectra have been acquired for γ-rays with energies from 10 to 140 keV using 241Am, 133Ba, and 57Co radioactive sources. The resolution of the BPX 65 encountered with the γ-rays emitted by 241Am at 59.5-keV is 2.5 keV (FWHM - Full Width at Half Maximum), which is close to the value obtained with a pulser, showing that its main limitation is the electronic chain employed in the setup. The response function to monoenergetic electrons in the same energy range is studied in the companion paper.pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorshipIDFAPESP: 16/13116-5; 17/12661-2pt_BR
dc.description.sponsorshipIDCNPq: 306331/2016-0; 311687/2017-2pt_BR
dc.format.extent1-11pt_BR
dc.identifier.citationMALAFRONTE, A.A.; PETRI, A.R.; GONCALVES, J.A.C.; BARROS, S.F.; BUENO, C.C.; MAIDANA, N.L.; MANGIAROTTI, A.; MARTINS, M.N.; QUIVY, A.A.; VANIN, V.R. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. <b>Radiation Physics and Chemistry</b>, v. 179, p. 1-11, 2021. DOI: <a href="https://dx.doi.org/10.1016/j.radphyschem.2020.109103">10.1016/j.radphyschem.2020.109103</a>. Disponível em: http://200.136.52.105/handle/123456789/31604.
dc.identifier.doi10.1016/j.radphyschem.2020.109103pt_BR
dc.identifier.issn0969-806Xpt_BR
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.percentilfi57.09pt_BR
dc.identifier.percentilfiCiteScore70.00
dc.identifier.urihttp://200.136.52.105/handle/123456789/31604
dc.identifier.vol179pt_BR
dc.relation.ispartofRadiation Physics and Chemistrypt_BR
dc.rightsopenAccesspt_BR
dc.subjectphotodiodes
dc.subjectp-type conductors
dc.subjectsilicon
dc.subjectsi semiconductor detectors
dc.subjectx-ray spectroscopy
dc.subjectgamma spectroscopy
dc.subjectsemiconductor diodes
dc.subjectplasma
dc.titleA low-cost small-size commercial PIN photodiodept_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.codigoautor1592
ipen.codigoautor924
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.date.recebimento20-12
ipen.identifier.fi2.776pt_BR
ipen.identifier.fiCiteScore4.5
ipen.identifier.ipendoc27376pt_BR
ipen.identifier.iwosWoSpt_BR
ipen.range.fi1.500 - 2.999
ipen.range.percentilfi50.00 - 74.99
ipen.subtituloI. Electrical characterisation and low-energy photon spectrometrypt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublicationfa74399b-83a0-4f46-91e0-da469104d3f6
relation.isAuthorOfPublication76fdc4d1-7624-4332-a9d0-f06826000679
relation.isAuthorOfPublication.latestForDiscovery76fdc4d1-7624-4332-a9d0-f06826000679
sigepi.autor.atividadeBUENO, C.C.:1592:240:Npt_BR
sigepi.autor.atividadeGONCALVES, J.A.C.:924:240:Npt_BR

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