Optimization of the HgI2 Crystal preparation for application as a radiation semiconductor detector
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Studies in Engineering and Technology
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The effect of HgI2 crystal encapsulation using different polymer resins, with the intent of avoiding the oxidation of the
crystal surface, was evaluated in this work. The crystal was purified and grown by the physical vapor transport (PVT)
technique modified. Systematic measurements were carried out for evaluating the stoichiometry, structure orientation,
surface morphology and impurity of the crystal grown. The purer region of the crystal grown was selected to be
prepared as a radiation detector, applying water-based conductive ink contacts and copper wire on the crystal surfaces.
After that, the crystal was encapsulated with a polymeric resin which insulates atmospheric gases, aiming to improve
the stability of the HgI2 detector. Four resins were used for crystal encapslation and the performance of the detector
depended on the composition of the resins used. Among the four resins studied to evaluate the influence of
encapsulation on the performance of crystals, as a radiation detector, the best result of resistivity and energy spectrum
was obtained for the resin #3 (50% - 100% of Methylacetate and 5% - 10% of n-butylacetate). The encapsulation of
crystals with polymer resins, performed with the intent of avoiding the oxidation of the crystal surface, did not
compromise the measurements and were fully capable of detecting the presence of gamma radiation. The stability of the
encapsulated HgI2 crystal detector was of up to 78 hs, while the stability found for HgI2 detector no encapsulated was in
order 3 ~4 hs.
Como referenciar
MARTINS, JOAO F.T.; SANTOS, ROBINSON A. dos; FERRAZ, CAUE de M.; OLIVEIRA, RENE R.; FIEDERLE, MICHAEL; AMADEU, RAFAEL de A.; SANTOS, RODRIGO S. dos; SILVA, THIAGO L.B. da; HAMADA, MARGARIDA M. Optimization of the HgI2 Crystal preparation for application as a radiation semiconductor detector. Studies in Engineering and Technology, v. 5, n. 1, p. 76-88, 2018. DOI: 10.11114/set.v5i1.3149. Disponível em: http://repositorio.ipen.br/handle/123456789/29321. Acesso em: 30 Dec 2025.
Esta referência é gerada automaticamente de acordo com as normas do estilo IPEN/SP (ABNT NBR 6023) e recomenda-se uma verificação final e ajustes caso necessário.