Gamma-radiation Dosimetry with magnetic czochralski silicon diode

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dc.contributor.authorCAMARGO, F.pt_BR
dc.contributor.authorGONCALVES, J.A.C.pt_BR
dc.contributor.authorKHOURY, H.J.pt_BR
dc.contributor.authorTUOMINEN, E.pt_BR
dc.contributor.authorHARKONEN, J.pt_BR
dc.contributor.authorBUENO, C.C.pt_BR
dc.coverageInternacionalpt_BR
dc.creator.eventoNUCLEAR SCIENCE SYMPOSIUM/MEDICAL IMAGING CONFERENCEpt_BR
dc.date.accessioned2014-11-17T18:04:43Zpt_BR
dc.date.accessioned2014-11-18T18:19:55Zpt_BR
dc.date.accessioned2015-04-02T01:20:53Z
dc.date.available2014-11-17T18:04:43Zpt_BR
dc.date.available2014-11-18T18:19:55Zpt_BR
dc.date.available2015-04-02T01:20:53Z
dc.date.eventoOctober 26 - November 3, 2007pt_BR
dc.description.abstractThis work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p+ /n/n+ junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipIDFAPESP: 03/12720-6
dc.description.sponsorshipIDCNPq: 303138/2006-8
dc.format.extent696-698pt_BR
dc.identifier.citationCAMARGO, F.; GONCALVES, J.A.C.; KHOURY, H.J.; TUOMINEN, E.; HARKONEN, J.; BUENO, C.C. Gamma-radiation Dosimetry with magnetic czochralski silicon diode. In: NUCLEAR SCIENCE SYMPOSIUM/MEDICAL IMAGING CONFERENCE, October 26 - November 3, 2007, Honolulu, HI. <b>Proceedings...</b> p. 696-698. DOI: <a href="https://dx.doi.org/10.1109/NSSMIC.2007.4436428">10.1109/NSSMIC.2007.4436428</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/16056.
dc.identifier.doi10.1109/NSSMIC.2007.4436428
dc.identifier.orcidhttps://orcid.org/0000-0001-7881-7254
dc.identifier.orcidhttps://orcid.org/0000-0002-8940-9544
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/16056pt_BR
dc.local.eventoHonolulu, HIpt_BR
dc.rightsopenAccesspt_BR
dc.subjectcobalt 60pt_BR
dc.subjectcurrent densitypt_BR
dc.subjectczochralski methodpt_BR
dc.subjectgamma dosimetrypt_BR
dc.subjectphotocurrentspt_BR
dc.subjectsi semiconductor detectorspt_BR
dc.subjectsilicon diodespt_BR
dc.subjecttime dependencept_BR
dc.titleGamma-radiation Dosimetry with magnetic czochralski silicon diodept_BR
dc.typeTexto completo de eventopt_BR
dspace.entity.typePublication
ipen.autorCARMEN CECILIA BUENO TOBIAS
ipen.autorJOSEMARY ANGELICA CORREA GONCALVES
ipen.autorFABIOLA DE ALMEIDA CAMARGO
ipen.codigoautor1592
ipen.codigoautor924
ipen.codigoautor3490
ipen.contributor.ipenauthorCARMEN CECILIA BUENO TOBIAS
ipen.contributor.ipenauthorJOSEMARY ANGELICA CORREA GONCALVES
ipen.contributor.ipenauthorFABIOLA DE ALMEIDA CAMARGO
ipen.date.recebimento11-08pt_BR
ipen.event.datapadronizada2007pt_BR
ipen.identifier.ipendoc16773pt_BR
ipen.notas.internasProceedingspt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublicationfa74399b-83a0-4f46-91e0-da469104d3f6
relation.isAuthorOfPublication76fdc4d1-7624-4332-a9d0-f06826000679
relation.isAuthorOfPublicationdb786116-99d1-4bb0-a3bd-d815b45995da
relation.isAuthorOfPublication.latestForDiscoverydb786116-99d1-4bb0-a3bd-d815b45995da
sigepi.autor.atividadeCAMARGO, F.:3490:29:Spt_BR
sigepi.autor.atividadeGONÇALVES, J.A.C.:924:5:Npt_BR
sigepi.autor.atividadeBUENO, C.C.:1592:5:Npt_BR

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