Electronic barriers produced at ZnO surfaces by ion implantation and annealing

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dc.contributor.authorSONDER, E.pt_BR
dc.contributor.authorZUHR, R.A.pt_BR
dc.contributor.authorMARTINELLI, J.R.pt_BR
dc.coverageInternacionalpt_BR
dc.date.accessioned2014-07-31T11:32:36Zpt_BR
dc.date.accessioned2014-07-31T11:52:10Z
dc.date.available2014-07-31T11:32:36Zpt_BR
dc.date.available2014-07-31T11:52:10Z
dc.date.issued1986pt_BR
dc.format.extent365-371pt_BR
dc.identifier.citationSONDER, E.; ZUHR, R.A.; MARTINELLI, J.R. Electronic barriers produced at ZnO surfaces by ion implantation and annealing. <b>Materials Research Society Symposium Proceedings</b>, v. 60, p. 365-371, 1986. Disponível em: http://repositorio.ipen.br/handle/123456789/6862.
dc.identifier.issn1946-4274pt_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/6862pt_BR
dc.identifier.vol60pt_BR
dc.relation.ispartofMaterials Research Society Symposium Proceedingspt_BR
dc.rightsopenAccessen
dc.sourcePaper presented at the Materials Research Society Symposium on Defect Properties and Processing of High-Technology Nonmetallic Materials, Boston, MA, USA, Dec. 2-6, 1985pt_BR
dc.subjectannealingpt_BR
dc.subjectdoped materialspt_BR
dc.subjectelectrical propertiespt_BR
dc.subjection implantationpt_BR
dc.subjectsemiconductor resistorspt_BR
dc.subjectzinc oxidespt_BR
dc.titleElectronic barriers produced at ZnO surfaces by ion implantation and annealingpt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorJOSE ROBERTO MARTINELLI
ipen.codigoautor155
ipen.contributor.ipenauthorJOSE ROBERTO MARTINELLI
ipen.date.recebimento86-12pt_BR
ipen.identifier.ipendoc02344pt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublication3495f138-8a70-4cce-b120-48cc7bb1f0b3
relation.isAuthorOfPublication.latestForDiscovery3495f138-8a70-4cce-b120-48cc7bb1f0b3
sigepi.autor.atividadept_BR
sigepi.autor.atividadeSONDER, E.:-1:-1:Spt_BR
sigepi.autor.atividadept_BR
sigepi.autor.atividadeZUHR, R.A.:-1:-1:Npt_BR
sigepi.autor.atividadeMARTINELLI, J.R.:155:-1:Npt_BR

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