Modeling and simulations in symmetrical supercapacitors using time domain mathematical expressions

dc.contributor.authorFERNANDEZ, ANTONIO P.R.pt_BR
dc.contributor.authorPERIGO, ELIO A.pt_BR
dc.contributor.authorFARIA JUNIOR, RUBENS N. dept_BR
dc.coverageInternacionalpt_BR
dc.date.accessioned2022-12-12T17:45:57Z
dc.date.available2022-12-12T17:45:57Z
dc.date.issued2022pt_BR
dc.description.abstractThis study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of constant electric potential in time ε and the curve of the discharge process through two fixed resistors. The first resistor RCo is a control that aims to prevent sudden variations in the intensity of the electric current i1(t) present at the terminals of the electrochemical supercapacitor at the beginning of the charging process. The second resistor is the internal resistance RA of the ammeter used in the calculation of the intensity of the electric current i1(t) over time in the charging and discharging processes. The mathematical equations generated were based on a 2R(C + kUC(t)) electrical circuit model and allowed to simulate the effects of the potential-dependent capacitance (kUC(t)) on the charge and discharge curves and hence on the calculated values of the fixed capacitance C, the equivalent series resistance (ESR), the equivalent parallel resistance (EPR) and the electrical potential dependent capacitance index k.pt_BR
dc.format.extent3083-3100pt_BR
dc.identifier.citationFERNANDEZ, ANTONIO P.R.; PERIGO, ELIO A.; FARIA JUNIOR, RUBENS N. de. Modeling and simulations in symmetrical supercapacitors using time domain mathematical expressions. <b>Journal of Applied Mathematics and Physics</b>, v. 10, n. 10, p. 3083-3100, 2022. DOI: <a href="https://dx.doi.org/10.4236/jamp.2022.1010206">10.4236/jamp.2022.1010206</a>. Disponível em: http://repositorio.ipen.br/handle/123456789/33422.
dc.identifier.doi10.4236/jamp.2022.1010206pt_BR
dc.identifier.fasciculo10pt_BR
dc.identifier.issn2327-4352pt_BR
dc.identifier.percentilfiSem Percentilpt_BR
dc.identifier.percentilfiCiteScoreSem Percentil CiteScorept_BR
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/33422
dc.identifier.vol10pt_BR
dc.relation.ispartofJournal of Applied Mathematics and Physicspt_BR
dc.rightsopenAccesspt_BR
dc.subjectcapacitors
dc.subjectelectronic circuits
dc.subjectmathematical solutions
dc.subjectequations
dc.subjectsimulation
dc.subjectelectric potential
dc.subjectcapacitance
dc.titleModeling and simulations in symmetrical supercapacitors using time domain mathematical expressionspt_BR
dc.typeArtigo de periódicopt_BR
dspace.entity.typePublication
ipen.autorRUBENS NUNES DE FARIA JUNIOR
ipen.autorANTONIO PAULO RODRIGUES FERNANDEZ
ipen.codigoautor227
ipen.codigoautor10493
ipen.contributor.ipenauthorRUBENS NUNES DE FARIA JUNIOR
ipen.contributor.ipenauthorANTONIO PAULO RODRIGUES FERNANDEZ
ipen.date.recebimento22-12
ipen.identifier.fiSem F.I.pt_BR
ipen.identifier.fiCiteScoreSem CiteScorept_BR
ipen.identifier.ipendoc29056pt_BR
ipen.type.genreArtigo
relation.isAuthorOfPublication20cb7788-3957-4550-9e5c-cf7f5261eec4
relation.isAuthorOfPublicationf62cfc1c-e2ef-4a1d-b5a8-eb54a6088afc
relation.isAuthorOfPublication.latestForDiscoveryf62cfc1c-e2ef-4a1d-b5a8-eb54a6088afc
sigepi.autor.atividadeFARIA JUNIOR, RUBENS N. de:227:730:Npt_BR
sigepi.autor.atividadeFERNANDEZ, ANTONIO P.R.:10493:730:Spt_BR

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