Effects of radiation damage on dosimetric properties of standard float zone (FZ) and magnetic czochralski (MCz) diodes in high-dose electron processing applications
| dc.contributor.author | PASCOALINO, K.C.S. | pt_BR |
| dc.contributor.author | SANTOS, T.C. | pt_BR |
| dc.contributor.author | GONCALVES, J.A.C. | pt_BR |
| dc.contributor.author | HARKONEN, J. | pt_BR |
| dc.contributor.author | BUENO, C.C. | pt_BR |
| dc.coverage | Internacional | pt_BR |
| dc.creator.evento | INTERNATIONAL CONFERENCE ON SOLID STATE DOSIMETRY, 17th | pt_BR |
| dc.date.accessioned | 2014-11-19T10:57:14Z | pt_BR |
| dc.date.accessioned | 2014-11-19T13:59:54Z | pt_BR |
| dc.date.accessioned | 2015-04-01T12:48:48Z | |
| dc.date.available | 2014-11-19T10:57:14Z | pt_BR |
| dc.date.available | 2014-11-19T13:59:54Z | pt_BR |
| dc.date.available | 2015-04-01T12:48:48Z | |
| dc.date.evento | 22-27 de setembro, 2013 | pt_BR |
| dc.event.sigla | SSD17 | pt_BR |
| dc.identifier.citation | PASCOALINO, K.C.S.; SANTOS, T.C.; GONCALVES, J.A.C.; HARKONEN, J.; BUENO, C.C. Effects of radiation damage on dosimetric properties of standard float zone (FZ) and magnetic czochralski (MCz) diodes in high-dose electron processing applications. In: INTERNATIONAL CONFERENCE ON SOLID STATE DOSIMETRY, 17th, 22-27 de setembro, 2013, Recife, PE. <b>Abstract...</b> Disponível em: http://repositorio.ipen.br/handle/123456789/20283. | |
| dc.identifier.orcid | https://orcid.org/0000-0001-7881-7254 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-8940-9544 | |
| dc.identifier.uri | http://repositorio.ipen.br/handle/123456789/20283 | pt_BR |
| dc.local.evento | Recife, PE | pt_BR |
| dc.rights | openAccess | pt_BR |
| dc.subject | radiation effects | pt_BR |
| dc.subject | dosemeters | pt_BR |
| dc.subject | magnetic fields | pt_BR |
| dc.subject | czochralski method | pt_BR |
| dc.subject | silicon diodes | pt_BR |
| dc.subject | radiation doses | pt_BR |
| dc.subject | electron beams | pt_BR |
| dc.title | Effects of radiation damage on dosimetric properties of standard float zone (FZ) and magnetic czochralski (MCz) diodes in high-dose electron processing applications | pt_BR |
| dc.type | Resumo de eventos científicos | pt_BR |
| dspace.entity.type | Publication | |
| ipen.autor | CARMEN CECILIA BUENO TOBIAS | |
| ipen.autor | JOSEMARY ANGELICA CORREA GONCALVES | |
| ipen.codigoautor | 1592 | |
| ipen.codigoautor | 924 | |
| ipen.contributor.ipenauthor | CARMEN CECILIA BUENO TOBIAS | |
| ipen.contributor.ipenauthor | JOSEMARY ANGELICA CORREA GONCALVES | |
| ipen.date.recebimento | 14-01 | pt_BR |
| ipen.event.datapadronizada | 2013 | pt_BR |
| ipen.identifier.ipendoc | 19769 | pt_BR |
| ipen.notas.internas | Abstract | pt_BR |
| ipen.type.genre | Resumo | |
| relation.isAuthorOfPublication | fa74399b-83a0-4f46-91e0-da469104d3f6 | |
| relation.isAuthorOfPublication | 76fdc4d1-7624-4332-a9d0-f06826000679 | |
| relation.isAuthorOfPublication.latestForDiscovery | 76fdc4d1-7624-4332-a9d0-f06826000679 | |
| sigepi.autor.atividade | PASCOALINO, K.C.S.:-1:-1:S | pt_BR |
| sigepi.autor.atividade | SANTOS, T.C.:-1:-1:N | pt_BR |
| sigepi.autor.atividade | GONÇALVES, J.A.C.:924:240:N | pt_BR |
| sigepi.autor.atividade | HARKONEN, J.:-1:-1:N | pt_BR |
| sigepi.autor.atividade | BUENO, C.C.:1592:240:N | pt_BR |
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