Eletronic response of photodiode coupled to a boron thin film

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dc.contributor.authorCOSTA, P.
dc.contributor.authorCOSTA, F.E.
dc.contributor.authorRAELE, M.P.
dc.contributor.authorZAHN, G.
dc.contributor.authorGERALDO, B.
dc.contributor.authorVIEIRA JUNIOR, N.D.
dc.contributor.authorSAMAD, R.E.
dc.contributor.authorGENEZINI, F.A.
dc.coverageInternacionalpt_BR
dc.creator.evento60 YEARS OF IEA-R1: INTERNATIONAL WORKSHOP ON UTILIZATION OF RESEARCH REACTORSpt_BR
dc.date.accessioned2018-03-19T11:45:01Z
dc.date.available2018-03-19T11:45:01Z
dc.date.eventoNovember 28 - December 01, 2017pt_BR
dc.description.abstractA portable thermal neutron detector is proposed using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64% (0.14 m), 7.30% (0.44 m) and 6.80% (0.63 m). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode.pt_BR
dc.format.extent56-56pt_BR
dc.identifier.citationCOSTA, P.; COSTA, F.E.; RAELE, M.P.; ZAHN, G.; GERALDO, B.; VIEIRA JUNIOR, N.D.; SAMAD, R.E.; GENEZINI, F.A. Eletronic response of photodiode coupled to a boron thin film. In: 60 YEARS OF IEA-R1: INTERNATIONAL WORKSHOP ON UTILIZATION OF RESEARCH REACTORS, November 28 - December 01, 2017, São Paulo, SP. <b>Abstract...</b> São Paulo, SP: Instituto de Pesquisas Energéticas e Nucleares, 2017. p. 56-56. Disponível em: http://repositorio.ipen.br/handle/123456789/28753.
dc.identifier.orcidhttps://orcid.org/0000-0002-6318-6805
dc.identifier.orcidhttps://orcid.org/0000-0001-7762-8961
dc.identifier.orcidhttps://orcid.org/0000-0003-0092-9357
dc.identifier.orcidhttps://orcid.org/0000-0003-3237-8588
dc.identifier.orcidhttps://orcid.org/0000-0002-6461-6766
dc.identifier.urihttp://repositorio.ipen.br/handle/123456789/28753
dc.localSão Paulo, SPpt_BR
dc.local.eventoSão Paulo, SPpt_BR
dc.publisherInstituto de Pesquisas Energéticas e Nuclearespt_BR
dc.rightsopenAccesspt_BR
dc.subjectamericium 241
dc.subjectboron
dc.subjectelectrical properties
dc.subjectenergy spectra
dc.subjectneutron detectors
dc.subjectphotodiodes
dc.subjectportable equipment
dc.subjectthermal neutrons
dc.subjectthin films
dc.subjectbrazilian cnen
dc.titleEletronic response of photodiode coupled to a boron thin filmpt_BR
dc.typeResumo de eventos científicospt_BR
dspace.entity.typePublication
ipen.autorBIANCA GERALDO
ipen.autorFREDERICO ANTONIO GENEZINI
ipen.autorRICARDO ELGUL SAMAD
ipen.autorNILSON DIAS VIEIRA JUNIOR
ipen.autorGUILHERME SOARES ZAHN
ipen.autorMARCUS PAULO RAELE
ipen.autorFABIO EDUARDO DA COSTA
ipen.autorPRISCILA COSTA
ipen.codigoautor9046
ipen.codigoautor2045
ipen.codigoautor909
ipen.codigoautor1582
ipen.codigoautor950
ipen.codigoautor3272
ipen.codigoautor384
ipen.codigoautor3965
ipen.contributor.ipenauthorBIANCA GERALDO
ipen.contributor.ipenauthorFREDERICO ANTONIO GENEZINI
ipen.contributor.ipenauthorRICARDO ELGUL SAMAD
ipen.contributor.ipenauthorNILSON DIAS VIEIRA JUNIOR
ipen.contributor.ipenauthorGUILHERME SOARES ZAHN
ipen.contributor.ipenauthorMARCUS PAULO RAELE
ipen.contributor.ipenauthorFABIO EDUARDO DA COSTA
ipen.contributor.ipenauthorPRISCILA COSTA
ipen.date.recebimento18-03pt_BR
ipen.event.datapadronizada2017pt_BR
ipen.identifier.ipendoc24575pt_BR
ipen.notas.internasAbstractpt_BR
ipen.type.genreResumo
relation.isAuthorOfPublication66a8b668-997f-4df0-b14a-61b1fc9d2885
relation.isAuthorOfPublication0c41d307-45a9-47c4-8281-5aa9ed46e6a4
relation.isAuthorOfPublicationb9c43c0c-87a6-4ebd-92ff-2515c4ac1d34
relation.isAuthorOfPublicationb5e4f489-bfb7-4e48-ae3a-eced2bb93a16
relation.isAuthorOfPublicationde99ffee-d830-4bea-aeeb-e8f3ccc34921
relation.isAuthorOfPublicationd6670c99-6533-4da0-b054-4a459258a12f
relation.isAuthorOfPublicationa4796db3-7719-4922-bfbe-a1789ba6bd51
relation.isAuthorOfPublicationb04923ba-9474-4066-b2b6-f52940ecd0f3
relation.isAuthorOfPublication.latestForDiscoveryb04923ba-9474-4066-b2b6-f52940ecd0f3
sigepi.autor.atividadeCOSTA, P.:3965:310:Spt_BR
sigepi.autor.atividadeCOSTA, F.E.:384:240:Npt_BR
sigepi.autor.atividadeRAELE, M.P.:3272:910:Npt_BR
sigepi.autor.atividadeZAHN, G.:950:310:Npt_BR
sigepi.autor.atividadeGERALDO, B.:9046:1120:Npt_BR
sigepi.autor.atividadeVIEIRA JUNIOR, N.D.:1582:930:Npt_BR
sigepi.autor.atividadeSAMAD, R.E.:909:930:Npt_BR
sigepi.autor.atividadeGENEZINI, F.A.:2045:310:Npt_BR
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